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Fabrication method of side-gate graphene transistor based on Cu film annealing and chlorine gas reaction

A transistor and graphene technology, applied in the field of microelectronics, can solve the problems of affecting device performance, high energy consumption, and high production costs, and achieve the effects of ensuring mobility, high material utilization, and low cost

Active Publication Date: 2015-09-02
陕西半导体先导技术中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantages of this method are: complex process, special removal of catalyst is required, large energy consumption and high production cost
In addition, during the device manufacturing process, the etching of the material will greatly degrade the mobility, and the influence of the substrate scattering effect will also degrade the mobility and affect the device performance.

Method used

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  • Fabrication method of side-gate graphene transistor based on Cu film annealing and chlorine gas reaction
  • Fabrication method of side-gate graphene transistor based on Cu film annealing and chlorine gas reaction
  • Fabrication method of side-gate graphene transistor based on Cu film annealing and chlorine gas reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Example 1, making a connected side-gate graphene transistor.

[0051] refer to figure 2 with image 3 , the manufacturing steps of this embodiment are as follows:

[0052] Step 1: Remove sample surface contaminants such as figure 2 (a).

[0053] (1.1) Clean the surface of the 4-inch Si substrate with NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0054] (1.2) Use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0055] Step 2: growing the carbonized layer.

[0056] (2.1) Put the Si substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level;

[0057] (2.2) in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1000 ° C, and then the flow rate of 40 sccm is introduced into the rea...

Embodiment 2

[0089] Embodiment 2, making a non-connected side-gate graphene transistor.

[0090] refer to Figure 4 with Figure 5 , the implementation steps of this embodiment are as follows:

[0091] Step 1: Clean the surface of the 12-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic contaminants such as Figure 4 (a).

[0092] Step 2: growing a carbonized layer. Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level; then in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1150 ° C, and then the flow rate of 40 sccm is introduced into the reaction chamber. 3 h 8 , and continued for 8min to grow a carbon...

Embodiment 3

[0117] Example 3, making a connected side-gate graphene transistor.

[0118] refer to figure 2 with image 3 , the implementation steps of this embodiment are as follows:

[0119] Step A: Remove sample surface contaminants such as figure 2 (a).

[0120] (A1) Clean the surface of the 8-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0121] (A2) Use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0122] Step B: growing a carbonized layer.

[0123] (B1) Put the Si substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level;

[0124] (B2) in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1050 ° C, and then the flow rate of 40 sccm is introduced into the...

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Abstract

The invention discloses a side grid grapheme transistor manufacturing method based on copper (Cu) film annealing and chlorine reaction, and mainly resolves the problems that grapheme prepared in the prior art is poor in continuity,grapheme devices are low in carrier mobility, and the like. The manufacturing method includes that after cleaning, a carbonization zone is grown on a Si sample wafer, and further a 3C-SiC film is formed; SiO2 is deposited on the 3C-SiC film, and a side grid transistor graphic window is formed on the SiO2 in a photoetching mode; the 3C-SiC film after photoetching is reacted with Cl2, and a carbon film is generated; a carbon film sample wafer is placed in a hydrofluoric acid solution, and the SiO2 is removed; the carbon film sample wafer with the SiO2 removed is placed on a Cu film, then the whole is placed into Ar gas, annealing is carried out under high temperature, and the carbon film is reconstructed into the grapheme; and a metallic Pd layer and a metallic Au layer are deposited on a grapheme sample wafer, and then metallic contact of the side grid transistor is formed in an etched mode. The grapheme prepared in the method is good in continuity, the process guarantees the mobility ratio of the transistor, and performance of the devices is promoted.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for manufacturing electronic devices on a graphene thin film semiconductor material, in particular to a method for preparing a side-gate graphene transistor based on Cu film annealing and chlorine gas reaction. technical background [0002] As people's demand for high-performance, high-reliability, and low-power equipment increases, more and more attention is paid to the characteristics of devices on integrated circuits. Graphene, a material composed of a two-dimensional hexagonal carbon lattice, has been proposed since 2004 by two scientists, Andre Jem and Kostya Novo, from the University of Manchester, UK, due to its outstanding electrical structural properties. After Xiaoluofu was discovered, it was regarded as a candidate material for manufacturing high-performance devices. [0003] There are endless new ways to prepare graphene, but there are two main ones t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04H01L29/786
Inventor 郭辉韦超张玉明张克基雷天民胡彦飞
Owner 陕西半导体先导技术中心有限公司
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