Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Improved ultrasonic cleaning method and apparatus

An ultrasonic and megasonic technology used in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc.

Active Publication Date: 2013-05-22
LAM RES CORP
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, conventional ultrasonic and megasonic cleaning methods are not entirely satisfactory for minimizing substrate damage and avoiding cleaning patterns (i.e., non-uniform removal) during the removal of nanoparticle contaminants.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Improved ultrasonic cleaning method and apparatus
  • Improved ultrasonic cleaning method and apparatus
  • Improved ultrasonic cleaning method and apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The dynamic response of bubbles in a liquid to an acoustic field usually includes volumetric oscillations and translational motions. Assuming an arbitrary starting position, it can be observed that the bubbles in the sound field move towards the pressure amplitude maximum or pressure amplitude minimum. In a relatively weak acoustic field, a bubble driven below the resonant frequency (meaning that the applied ultrasonic field is driven at a frequency lower than the natural resonant frequency of the bubble (calculated by the Minnaert equation)) moves towards the maximum pressure amplitude, while at the resonant frequency The above-driven bubbles move towards the minimum value of the pressure magnitude.

[0029] Under normal conditions, the air bubbles remain in the positions to which they were driven. The underlying mechanism is based on the principal Bjerknes force, which was first discovered and described by Bjerknes (1906). In higher intensity acoustic fields, a reve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.

Description

technical field [0001] This invention relates to the field of ultrasonic (including megasonic) cleaning of substrate surfaces. Background technique [0002] Removal of particulate contamination from semiconductor substrates can be achieved by ultrasonic cleaning. When the frequency of ultrasonic waves approaches or exceeds 1,000kHz (1MHz), it is often referred to as "megasonic." [0003] Acoustically activated gas bubbles close to any liquid-surface interface cause (a) shear stress at the surface that can cause removal of particulate contamination from the surface, (b) can lead to enhancements that facilitate electrochemical deposition processes, etching, cleaning Microstreaming of diffusion-limited reactions with mixing, and (c) enrichment of local active species close to the surface to affect chemical processes such as oxidation processes and etching, such as free radicals, ozone and plasma. [0004] However, conventional ultrasonic and megasonic cleaning methods are not...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/12
CPCH01L21/02052B08B3/12H01L21/67057
Inventor 弗兰克·卢德维格·霍尔斯蒂斯亚历山大·利珀特
Owner LAM RES CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com