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A target source preshaping enhanced EUV light generating device

A technology of extreme ultraviolet light generation device, which is applied in the direction of huge current X-ray tubes, discharge tubes, electrical components, etc., can solve the problems of low energy conversion efficiency of EUV light sources, and achieve improved energy conversion efficiency, increased output energy, Achieve the effect of optimal matching

Active Publication Date: 2015-09-09
ZHONGKE JINGYUAN ELECTRON LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of low energy conversion efficiency of the EUV light source used in lithography, the present invention proposes a target source pre-shaping enhanced EUV light generating device

Method used

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  • A target source preshaping enhanced EUV light generating device
  • A target source preshaping enhanced EUV light generating device
  • A target source preshaping enhanced EUV light generating device

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Embodiment Construction

[0027] The technical solution of the present invention solves the problem of low energy conversion efficiency of the EUV light source in the prior art by providing a target source pre-shaping enhancement device, improves the luminous efficiency of the EUV generating device, and increases the EUV light output energy of the device.

[0028] In order to better understand the above-mentioned technical solution, the above-mentioned technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0029] Such as figure 1 As shown, the embodiment of the present invention discloses a pre-shaping enhancement method and device, which is applied to an EUV light generating device. The EUV light generating device includes: a vacuum chamber 1, a target source generator 2, a target source 3, and a high-energy generator 7. Energy injector 8, EUV light collector 11, residual target collector 13, wherein,

[0030] The vacu...

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PUM

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Abstract

An extreme UV light generation device with pre-shaped and enhanced target source comprises a vacuum cavity (1), a target source generator (2), a target source pre-shaped enhancer, a high energy generator (7), an energy injector (8), an extreme UV light collector (11) and a residual target material collector (13). The target source pre-shaped enhancer comprises a target source motion track controller (4), a target source shaper (5), a target source detector (14), an extreme UV light and / or plasma detector (15) and a synchronous controller (16), wherein the synchronous controller (16) is used for controlling the target source generator (2), the target source motion track controller (4), the target source shaper (5), the high energy generator (7) and the energy injector (8) according to monitoring data of the target source detector (14) and the extreme UV light and / or plasma detector (15), so as to achieve the goal of optimizing output energy of extreme UV light. Using the extreme UV light generation device, the problem of low energy conversion efficiency of the existing UV light generation device can be solved, and the output energy of the extreme UV light of the device can be effectively increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an extreme ultraviolet light generating device. Background technique [0002] As the semiconductor industry has higher and higher requirements for the integration of integrated circuits (IC, Integrated Circuits), traditional visible light or near-ultraviolet lithography machines can no longer meet the needs of industry development, and the market needs lithography equipment with better performance to maintain the overall The rapid development momentum of the industry. It is well known that the lithographic resolution is inversely proportional to the numerical aperture of the projection objective and directly proportional to the exposure wavelength. Therefore, in order to improve the resolution of lithography, the next-generation lithography machine will use shorter wavelength EUV (Extreme Ultraviolet, extreme ultraviolet, especially extreme ultraviolet with a wavelength o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05G2/00
CPCH05G2/005H05G2/006
Inventor 宗明成黄有为陈浩李世光盖洪峰
Owner ZHONGKE JINGYUAN ELECTRON LTD
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