Filling method of groove

Abstract

The invention discloses a filling method of a groove. The filling method of the groove is finished by filling the groove in the manufacturing process of a semiconductor device, wherein a first monox thin film and a second monox thin film are circularly deposited and etched back in the groove. Stress of the first monox thin film is opposite to the stress of the second monox thin film. The two monox thin films with opposite stresses resolve the matching problem of stresses among different monox thin films. Filling requirements of large openings and deep grooves are simultaneously met.

Description

technical field The invention relates to the field of semiconductor device manufacturing, in particular to a trench filling method. Background technique The filling of trenches is a particularly critical step in semiconductor fabrication. At present, silicon dioxide and its derivatives are widely used for trench filling due to their good film properties. The traditional preparation process includes spin coating (Spin on Glass), sub-atmospheric pressure chemical vapor deposition (SACVD: Sub Atmosphere Chemical Vapor Deposition), plasma chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) and high-density plasma chemical Vapor deposition method (HDPCVD: High Density Plasma Chemical Vapor Deposition) and the like. The usual trench structure has a depth of no more than 1 micron and an opening of less than 0.25 micron (the size of the opening is fixed). Such a structure can be filled with no holes (Void free) by a simple single-step chemical vapor deposi...

AI Technical Summary

Problems solved by technology

However, when the structure of the trench is several microns in depth and the opening size is from 0.8 to 7 microns at the same time, the filling of the trench becomes quite challenging.

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