Light emitting diode and production method thereof

Abstract

The invention discloses a light emitting diode (LED) with a transparent conducting layer and a production method thereof. The LED comprises a substrate; a luminous epitaxial layer which is formed by sequentially stacking a first limit layer, a luminous layer and a semiconducting material layer of a second limit layer from the bottom up, and is formed above the substrate; a current barrier layer which is formed above a local area of the luminous epitaxial layer; a transparent conducting structure which is formed above the current barrier layer, extends out of the surface of the luminous epitaxial layer and is divided into a luminous zone and a non-luminous zone; and an electrode P which is formed above the non-luminous zone of the transparent conducting structure, wherein the non-luminous zone is corresponding to the current barrier layer, the thickness of the non-luminous zone is larger than that of the luminous zone, and therefore the transparent conducting structure is enabled to form good ohmic contact with the luminous epitaxial layer, and decreases absorption of light. The structure can guarantee current expansibility, reduce working voltage, and decrease the absorption of the light.

Description

technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, more particularly to a light-emitting diode with a transparent conductive layer and a manufacturing method thereof. Background technique [0002] After years of development, light-emitting diodes (LEDs) have been widely used in different fields such as display, indication, backlight, and lighting. Group III-V compounds are currently the mainstream semiconductor materials for making light-emitting diodes, among which gallium nitride-based materials and aluminum gallium indium phosphide-based materials are the most common. The current spreading performance of traditional p-type III-V semiconductor materials is generally poor. In order to allow the current to be uniformly injected into the light-emitting layer, it is often necessary to add a transparent conductive layer on the p-type material layer. Among many materials that can be used as transparent conductive layers, s...

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Problems solved by technology

To adjust the process parameters of the coating, generally use segmented coating or reduce the rate, etc., and often have to take into account the photoelectric parameters and electrode adhesion, making it difficult to adjust the process parameters

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