Processing method for multi-way electrostatic discharge protection device

Abstract

An embodiment of the invention discloses a processing method for a multi-way ESD (electrostatic discharge) protection device. The processing method for the multi-way ESD protection device includes: processing N blind holes on a first base material which comprises a first conductive layer, a second conductive layer and a first insulating layer between the first conductive layer and the second conductive layer; filling conductive materials in the N blind holes; performing graphic processing on the second conductive layer; performing graphic processing on the first conductive layer and / or processing a blind groove, penetrating through the first insulating layer, on the first conductive layer, and setting a first resin layer on the first conductive layer; setting a protection layer on the first resin layer; processing N / 2 blind holes, penetrating through the first insulating layer, on the protection layer; filling slurry in the N / 2 blind holes; stripping the protection layer from the first resin layer; and setting a protection upper body on the first resin layer. By means of the processing method for the multi-way ESD protection device, manufacturing cost of the ESD protection device can be lowered, and safety of the ESD protection device can be improved.

Description

technical field [0001] The invention relates to the technical field of electronic device processing and manufacturing, in particular to a processing method for a multi-channel electrostatic discharge protection device. Background technique [0002] With the continuous development of integrated circuit technology, the size of transistors has been reduced to submicron or even deep submicron stage. The reduction of the physical size of the device has greatly improved the integration of the circuit, but the reliability of the highly integrated device has also followed. ESD (electro-static discharge, electrostatic discharge) is one of the most important causes of failure of electronic equipment and components. This is mainly because, as the size of components shrinks, for example, the thickness of the gate oxide layer of field effect elements gradually becomes thinner. Although this change can greatly improve the working efficiency of the circuit, it may make the circuit more fr...

AI Technical Summary

Problems solved by technology

The ESD protection device in the prior art uses the reverse breakdown principle of the PN junction to achieve the purpose of electrostatic protection, and what it uses is a semiconductor manufacturing process. Therefore, this type of ESD protection device often requires a higher manufacturing cost to achieve Ultra-small parasitic capacitance and leakage current (for example, achieve a parasitic capacitance of less than 0.2pf and a leakage current of less than 100nA)

In addition, when the current passing through this type of ESD protection device is too large, it may cause the ESD device to burst and form an open circuit

Images