Continuous charging silicon single crystal furnace

A technology of silicon single crystal and hopper, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of inconsistent overall concentration of crystal rods, achieve the effect of reducing production costs and ensuring the overall concentration

Inactive Publication Date: 2013-03-27
无锡市蓝德光电科技有限公司
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  • Abstract
  • Description
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Problems solved by technology

[0008] The object of the present invention is to propose a continuous feeding silicon single crystal furnace, which solves the problem of inconsistency in the overall concentration of crystal rods grown in a silicon single crystal furnace

Method used

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  • Continuous charging silicon single crystal furnace

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Embodiment Construction

[0017] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods.

[0018] like figure 1 Shown, is the concrete implementation structure schematic diagram of the present invention, among the figure:

[0019] The crystal rod 1 is placed in a single crystal furnace, the upper end of the crystal rod 1 is connected with a pulling device 9, and the furnace body is provided with a quartz crucible and a graphite crucible 5, and the quartz crucible is set with double crucibles, including an inner crucible 2 and an outer crucible 3 outside it. , there is a feeding gap between the inner and outer crucibles, the bottoms of the inner and outer crucibles are connected together, and a connected hole is arranged at the bottom, a graphite heater 6 is arranged on the outside of the graphite crucible 5, and an insulating material 7 is wrapped on the outside of the heater. A feeding ...

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Abstract

A continuous charging silicon single crystal furnace comprises a lifting device, a charging device, a quartz crucible, a graphite crucible and a graphite heater, wherein the quartz crucible is divided into an inner crucible and an outer crucible; the bottoms of the inner crucible and the outer crucible are connected with each other and are provided with communicated holes, and a charging gap is left between the inner crucible and the outer crucible; a weighing sensor and a camera for monitoring crystal bar growing are arranged on the lifting device; and the charging device is charged through a charging hopper, and a charging port is positioned between the inner crucible and the outer crucible. The quartz crucible is arranged into an inner layer and an outer layer, and the charging device charges between the inner crucible and the outer crucible, so that raw materials can be effectively prevented from being charged to influence the crystal bar growing, the integral concentration of growing crystal bars is ensured, and the production cost of the crystal bars with specific concentration is lowered.

Description

technical field [0001] The invention relates to a continuous feeding silicon single crystal furnace. Background technique [0002] Silicon single crystals are widely used in the semiconductor and photovoltaic industries. The production process of silicon single crystal rod is as follows: place the quartz crucible containing silicon raw material in the silicon single crystal pulling growth furnace; vacuumize the growth furnace and heat it until the silicon raw material melts; The top is slowly approaching the melt surface and is in contact with it; the seed crystal is gradually pulled up according to the process requirements. By controlling the speed and temperature of the seed crystal, the ingot is gradually pulled out from the liquid surface. [0003] In the process of silicon single crystal production, a certain amount of other elements are generally added to the silicon raw material, which is called doping. These elements can be boron, phosphorus or antimony, etc. Diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 惠梦君
Owner 无锡市蓝德光电科技有限公司
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