Grid design used for III-V compound semiconductor cell

A grid and grid line technology, applied in the field of solar cell design, can solve problems such as undesigned

Active Publication Date: 2013-03-20
SOLAERO TECH CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

While III-V compound semiconductor solar cells have found widespread use in satellite applications, where power-to-weight efficiency is more important than cost-per-watt considerations in the selection of

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  • Grid design used for III-V compound semiconductor cell
  • Grid design used for III-V compound semiconductor cell
  • Grid design used for III-V compound semiconductor cell

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Embodiment Construction

[0032] Details of the invention will now be described, including exemplary aspects and embodiments of the invention. Referring to the drawings and the following description, the use of the same reference numbers to refer to the same or functionally similar elements, and the same reference numbers are intended to illustrate the main features of the exemplary embodiments in a highly simplified diagrammatic manner. Furthermore, the drawings do not intend to depict every feature of actual embodiments or relative dimensions of the depicted elements, and are not drawn to scale.

[0033] The design of typical semiconductor structures for triple-junction III-V compound semiconductor solar cells is more explicitly described in US Patent No. 6,680,432, which is incorporated herein by reference.

[0034] As shown in the illustrated example of FIG. 1 , the bottom subunit 10 includes substrates 11 , 12 formed of p-type germanium (“Ge”), the bottom portion also serving as the base layer for...

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Abstract

The invention discloses a photovoltaic solar cell used for generating energy from the sun. The photovoltaic solar cell comprises a germanium substrate, a gallium arsenide middle unit, an indium phosphide gallium top unit and a surface grid. The germanium substrate comprises a first photosensitive knot and a bottom solar subelement is formed, the gallium arsenide middle unit is placed on the germanium substrate, the indium phosphide gallium top unit is arranged on the middle unit, and the surface grid comprises a plurality of separated grid lines with a thickness more than 7 microns and a trapezoid cross section. The cross section area is between 45 square microns and 55 square microns.

Description

[0001] Richard W. Hoffman, Jr., Pravin Patel, and Tansen Varghese on "For III-V US Patent Application for Grid Design of Compound Semiconductor Cells (GRIDDESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL) technical field [0002] The present invention relates generally to the design of solar cells for space or concentrator terrestrial solar power systems that convert sunlight into electrical energy, and more particularly to an arrangement that includes a grid configuration on the solar cells. Background technique [0003] Commercially available silicon solar cells for terrestrial solar power applications have efficiencies ranging from 8% to 15%. Compound semiconductor solar cells based on III-V compounds have an efficiency of 28% under normal operating conditions. Furthermore, it is well known that concentrating solar energy onto a III-V compound semiconductor photovoltaic cell increases the efficiency of the cell to over 37% efficiency in the concentrated state. [0004] Terr...

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 理查德·W·小霍夫曼普拉温·帕特尔坦森·瓦格赫塞
Owner SOLAERO TECH CORP
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