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Manufacturing method of reverse-conducting integrated gate-commutated thyristor

A technology of gate commutation and manufacturing methods, which is applied in the direction of thyristors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of unsuitable high-voltage devices, complex processes, and poor diffusion control accuracy of reverse conduction integrated gate commutation thyristors. Advanced problems, to achieve the effect of increasing the punch-through voltage, improving the isolation effect, and increasing the complexity of the process

Active Publication Date: 2013-03-13
ZHUZHOU CRRC TIMES SEMICON CO LTD
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Problems solved by technology

[0020] The purpose of the present invention is to provide a reverse conduction integrated gate commutated thyristor method to overcome the problems of low diffusion control precision, complex process and unsuitability for high voltage devices in the prior art. shortcoming

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  • Manufacturing method of reverse-conducting integrated gate-commutated thyristor

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specific Embodiment approach

[0088] as attached Figure 12 to attach Figure 19 Shown is a specific implementation of a reverse conduction integrated gate commutated thyristor manufacturing method of the present invention, including the following steps:

[0089] S100: as attached Figure 12 As shown, a layer of N' impurity is lightly doped on one side of the original N-substrate 6, and the N' impurity is phosphorus;

[0090] S101: as attached Figure 13 As shown, make the P-type base region 5 of GCT and the P-type base region 10 of FRD;

[0091] S102: as attached Figure 14 As shown, the N′ impurity doping treatment is performed on the other side of the N-substrate 6 (the side where the GCT anode is located), and the dopant is phosphorus;

[0092] S103: as attached Figure 15 As shown, N+ pre-deposition treatment is performed on the GCT cathode and the FRD cathode, and the dopant is phosphorus;

[0093] S105: as attached Figure 17 As shown, N+ advance and passivation treatment are carried out on ...

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Abstract

The invention discloses a manufacturing method of a reverse-conducting integrated gate-commutated thyristor. The method comprises the following steps: S100: lightly doping one side of an original N- substrate with a layer of N' impurity; S101, fabricating a P-type base region of a GCT (Gate Commuted Tryristor) and a P-type base region of an FRD (Fast Recovery Diode); S102, performing N' impurity doping on the other side of the N- substrate; S103, performing pre-deposition on a GCT cathode and an FRD cathode; S104, etching isolation trenches on the upper surface of an isolation region and a gate region of the GCT; S105, performing N+ propelling and passivation on the GCT cathode and the FRD cathode; S106, performing P+ doping on a GCT anode; and S107, fabricating electrodes. According to the invention, using the compensating effect of the impurity, under the condition that the P-type doping distribution of the isolation region is not changed, the effective width of the isolation region is increased, and the shortcomings existing in the prior art that the diffusion control precision is not high, and the process is complicated and not suitable for high pressure devices are overcome.

Description

technical field [0001] The invention relates to a manufacturing method of a power semiconductor switching device, in particular to a manufacturing method of a reverse conducting integrated gate commutated thyristor (RCGCT, Reverse Conducting Integrated Gate Commutated Thyristor). Background technique [0002] Reverse Conducting Integrated Gate Commutated Thyristor (Reverse Conducting Integrated Gate Commutated Thyristor, RCGCT) is a chip that integrates GCT (Gate Commutated Thyristor, gate commutated thyristor) and FRD (Fast Recovery Diode, fast recovery diode) power electronic devices. Among them, GCT is a power electronic switching device, and its typical working states are conduction state, blocking state, and the turn-on process and turn-off process of state transition. The electrodes are gate (Gate, control pole), anode (Anode) and cathode (Cathode). GCTs are mainly used as switching elements in power electronic devices. The typical structure of FRD is a PIN structur...

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Application Information

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IPC IPC(8): H01L21/332H01L29/74H01L29/06
Inventor 陈芳林刘可安唐龙谷张弦雷云
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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