High-responsivity visible blind organic UVB (ultraviolet b) optical detector

A photodetector and responsivity technology, which is applied in the field of high-responsivity organic visible blind UVB photodetectors, can solve the problems of narrowing the selection space of organic materials and increasing the difficulty of device design, achieving low price, convenient processing, and widening the selection surface Effect

Inactive Publication Date: 2013-02-13
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, in order to make the device produce high responsivity in the UVB range, it is necessary to take into account the contradiction between the small conjugate scale of the organic material and the low carrier mobility, which greatly reduces the selection space of the organic material and increases the Device Design Difficulty

Method used

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  • High-responsivity visible blind organic UVB (ultraviolet b) optical detector
  • High-responsivity visible blind organic UVB (ultraviolet b) optical detector
  • High-responsivity visible blind organic UVB (ultraviolet b) optical detector

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Embodiment 1

[0025] The glass substrate plated with copper conductive film was ultrasonically washed with detergent, isopropanol, ethanol and acetone for 5 minutes, rinsed with deionized water and dried. A PEDOT:PSS (polyaniline derivative) hole transport layer with a thickness of about 40 nm was prepared by spin coating on the ITO, and it was baked at 120°C for 15 minutes and then taken out. Select M (R1 is hydrogen, R2 is diphenylbenzene, R3 is triphenylamine) as the donor material, and bis(4-(4,6-diphenyl-1,3,5-triazin-2-yl ) phenyl) diphenyl silicon as acceptor material. First prepare M with a thickness of about 30 nm on PEDOT:PSS by spin coating, and then prepare bis(4-(4,6-diphenyl) with a thickness of about 20 nm on M film by vacuum evaporation -1,3,5-triazin-2-yl)phenyl)diphenyl silicon, the above two layers constitute an organic active layer with a planar heterojunction structure. Finally, a transparent aluminum electrode with a thickness of about 2 nm was prepared by vacuum eva...

Embodiment 2

[0027] The quartz substrate coated with the ITO conductive film was ultrasonically washed with detergent, isopropanol, ethanol and acetone for 5 minutes, rinsed with deionized water and dried. A PEDOT:PSS (polyaniline derivative) hole transport layer with a thickness of about 40 nm was prepared by spin coating on the ITO, and it was baked at 120°C for 15 minutes and then taken out. Select M (R1 is triphenylamine, R2 is diphenylbenzene, R3 is carbazole) as the donor material, and bis(4-(4,6-diphenyl-1,3,5-triazine-2- Base) phenyl) diphenyl silicon as acceptor material. A mixed film with a thickness of about 70 nm was prepared on PEDOT:PSS by vacuum mixed evaporation method. During the preparation process, by controlling the evaporation rate, the donor:acceptor weight ratio in the mixed film was 9:1, forming a Organic active layer of bulk heterojunction structure. Finally, a translucent silver electrode with a thickness of about 200 nm was prepared by vacuum evaporation. As m...

Embodiment 3

[0029] The silicon substrate coated with the FTO conductive film was ultrasonically washed with detergent, isopropanol, ethanol and acetone for 10 minutes, rinsed with deionized water and dried. A PEDOT:PSS (polyaniline derivative) hole transport layer with a thickness of about 40 nm was prepared by spin coating on the ITO, and it was baked at 120 °C for 15 minutes and then taken out. Select M (R1 is diphenylbenzene, R2 is triphenylamine, R3 is fluorene) as the donor material, and bis(4-(4,6-diphenyl-1,3,5-triazin-2-yl ) phenyl) diphenyl silicon as acceptor material. First prepare M with a thickness of about 30 nm by vacuum evaporation on PEDOT:PSS, and then prepare bis(4-(4,6-biphenyl) with a thickness of about 30 nm on the M film by vacuum evaporation Base-1,3,5-triazin-2-yl)phenyl)diphenyl silicon, the above two layers constitute the organic active layer of planar heterojunction structure. Finally, a transparent aluminum / silver electrode with a thickness of about 30 nm wa...

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Abstract

The invention discloses a high-responsivity visible blind organic UVB optical detector which comprises a substrate, a conducting layer, an organic hole transport layer, an organic active layer and a transparent metal electrode layer, wherein the conducting layer, the organic hole transport layer, the organic active layer and the transparent metal electrode layer are arranged on the substrate sequentially from bottom to top. According to the invention, through designing an organic active layer molecule structure, on the one hand, UVB light is not absorbed in a visual light region and a device is avoided being interfered by a visual light signal, on the other hand, the contradiction between a conjugation length and a migration rate of an organic active layer material is considered, and high response of UVB radiation is realized. Because the device uses one side of the transparent metal electrode layer as a signal incoming surface, no special requirement exists for the transparency of the substrate and the conducting layer, and the integration of the device on the substrate is facilitated.

Description

technical field [0001] The invention relates to an organic visible blind UVB light detector with high responsivity. Background technique [0002] Ultraviolet light refers to electromagnetic radiation with a wavelength below 400 nm. According to different wavelengths, it can be divided into UVA (320-400nm), UVB (280-320nm), UVC (200-280nm) and vacuum ultraviolet. Ultraviolet light is contained in sunlight, and it is mainly UVA and UVB that can reach the surface of the earth. Among them, UVB has the closest connection with human life, and has important applications in the synthesis of vitamin D, the control of plant growth, and the treatment of skin diseases. Therefore, among ultraviolet detectors, detectors capable of detecting UVB radiation have been attracting attention. At the same time, since most UVB detection needs to be carried out during the day, it is often required that the detector does not respond to visible light signals, which is called "visible blindness". ...

Claims

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Application Information

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IPC IPC(8): H01L51/44H01L51/46
CPCY02E10/549
Inventor 吴刚张婧琳陈红征汪茫
Owner ZHEJIANG UNIV
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