Highly Responsive Organic Solar-Blind Ultraviolet Light Detector

A technology of responsivity and ultraviolet light, applied in the field of detectors, can solve the problems of increasing the difficulty of device design and reducing the selection space of organic materials, and achieves the effect of low price and convenient processing

Active Publication Date: 2015-12-09
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At the same time, if the device is to achieve intrinsic solar-blind ultraviolet response, it is necessary to strictly limit the conjugate scale of organic materials.
At the same time, in order to make the device produce high responsivity in the solar-blind ultraviolet range, it is necessary to take into account the contradiction between the small conjugate scale of organic materials and the low carrier mobility, which greatly reduces the selection space of organic materials. Increased device design difficulty

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The glass substrate was ultrasonically washed with detergent, isopropanol, ethanol, and acetone for 5 minutes, rinsed with deionized water, and dried. Vacuum-deposit a layer of 10nm-thick metal aluminum on the glass substrate, and then prepare a PEDOT:PSS (polyaniline derivative) hole transport layer with a thickness of about 40nm by spin coating after UV-ozone treatment, 120° Bake at C for 15 minutes and remove. Choose D (R is pyrazine) as the donor material, and A (R is triazole) as the acceptor material. First prepare D with a thickness of about 30nm on PEDOT:PSS by spin coating, and then prepare A with a thickness of about 20nm on the D film by vacuum evaporation. The above two layers constitute the organic activity of the planar heterojunction structure layer. Finally, 1nm thick LiF and 100nm thick aluminum electrodes were sequentially prepared by vacuum evaporation. As mentioned above, get as figure 1 The high-responsivity organic solar-blind UV detector shown...

Embodiment 2

[0034] The quartz substrate was ultrasonically washed with detergent, isopropanol, ethanol, and acetone for 5 minutes, rinsed with deionized water and dried. Vacuum-deposit a layer of metallic silver with a thickness of 20nm on the quartz substrate, after UV-ozone treatment, prepare a PEDOT:PSS (polyaniline derivative) hole transport layer with a thickness of about 40nm by spin coating, 120°C Remove from the oven after 15 minutes. Choose D (R is pyridine) as the donor material, and A (R is triazine) as the acceptor material. A mixed film with a thickness of about 70nm was prepared by vacuum mixed evaporation on PEDOT:PSS. During the preparation process, the weight ratio of donor material D:acceptor material A in the mixed film was 95:5 by controlling the evaporation rate. , forming an organic active layer with a bulk heterojunction structure. Finally, 1nm thick LiF and 200nm silver electrodes were sequentially prepared by vacuum evaporation method. As mentioned above, get a...

Embodiment 3

[0036] The quartz substrate was ultrasonically washed with detergent, isopropanol, ethanol, and acetone for 5 minutes, rinsed with deionized water and dried. Vacuum-deposit a layer of 15nm thick metal gold on the quartz substrate, after UV-ozone treatment, prepare a PEDOT:PSS (polyaniline derivative) hole transport layer with a thickness of about 40nm by spin coating, 120°C Remove from the oven after 15 minutes. Choose D (R is pyridine) as the donor material, and A (R is pyridine) as the acceptor material. First prepare D with a thickness of about 30nm on PEDOT:PSS by vacuum evaporation, and then prepare A with a thickness of about 30nm on the D film by vacuum evaporation. active layer. Finally, 1nm thick LiF and 300nm gold electrodes were sequentially prepared by vacuum evaporation. As mentioned above, get as figure 1 High responsivity solar-blind UV detector shown.

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Abstract

The invention discloses a highly responsive organic solar blind type ultraviolet detector. The detector comprises a substrate, and a transparent metal electrode layer, an organic cavity transmission layer, an organic active layer, a cathode modification layer and a metal electrode layer which are sequentially arranged on from bottom to top on the substrate. Through the design of the organic active layer molecular structure and a component structure, one the one hand, the detector is enabled to absorb only ultraviolet signals in an area under 300nm, and the components are prevented from interference of visible blind ultraviolet signals and visible light signals, and on the other end, a contradiction between the conjugation length and the mobility rate of the organic active layer substance is taken into consideration and high responses to radiation under 300nm are realized. At the same time, since the one side of quartz / glass substrate covered with transparent metal electrode layer of the component serves as a signal incidence surface, the absorption of radiation under 300nm by a common ITO glass substrate is substantially prevented.

Description

technical field [0001] The invention relates to a detector, in particular to an organic sun-blind ultraviolet light detector with high responsivity. technical background [0002] During the passage of solar ultraviolet radiation through the atmosphere, due to strong absorption by oxygen atoms in the thermosphere and ozone in the stratosphere, only ultraviolet rays in the 300-400nm band can reach the near-surface space (below 25,000 meters), resulting in There is almost no ultraviolet radiation in the 0-300nm band in the atmosphere, and this band is the so-called "solar blind zone"; while the ultraviolet rays reaching the surface form a uniform ultraviolet background due to the scattering effect of the atmosphere, which is called the "visible blind zone". In view of the advantages of the "sun blind area" ultraviolet signal having a clean surface background, no interference from sunlight, and light signal processing burden, the detection (reception) of the "sun blind area" ult...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/44H01L51/46H01L51/42
CPCY02E10/549
Inventor 吴刚陈红征汪茫
Owner ZHEJIANG UNIV
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