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Method for preparing thermoelectric film by using layer by layer self-assembly

A technology of layer-by-layer self-assembly and thermoelectric thin film, which is applied in the direction of coating, metal material coating process, solid-state chemical plating, etc., can solve the problems of preparing thermoelectric thin film that have not been applied, and achieve superior performance, rich variety, and simple method operation Effect

Active Publication Date: 2013-02-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In terms of functionalization and practicality, layer-by-layer self-assembly has not been applied to the field of preparation of thermoelectric thin films, which is also a key issue that needs to be studied and solved urgently in the preparation of thermoelectric thin film materials.

Method used

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  • Method for preparing thermoelectric film by using layer by layer self-assembly
  • Method for preparing thermoelectric film by using layer by layer self-assembly
  • Method for preparing thermoelectric film by using layer by layer self-assembly

Examples

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Embodiment 1

[0031] see figure 1 and figure 2 , a method for preparing a thermoelectric thin film by layer-by-layer self-assembly, comprising the steps of:

[0032] 1) Preparation of nanoflake suspensions of thermoelectric materials: first prepare the precursor materials of thermoelectric materials, namely Na x CoO 2 The synthesis of is specifically: take the stoichiometric ratio of Na 2 CO 3 and Co 3 o 4 , where Na 2 CO 3 Excessive 20% (to make up for the loss of Na at high temperature), sintering after uniform grinding, sintering conditions: 760°C, 12h, after taking out the first sintered sample, fully ground and then sintering again, sintering conditions: 830°C, 24h, Get the layered compound Na x CoO 2 ;

[0033] Proton exchange, that is, step ①: Weighing Na x CoO 2 , add 5M HCl for proton exchange, the time is 1d, after the end, centrifuge and dry to obtain the proton exchange product after acid exchange, see figure 1 ;

[0034] Ion exchange, that is, step ②: Take the p...

Embodiment 2

[0040] This embodiment is basically the same as Embodiment 1, especially in that:

[0041] see image 3 and Figure 4 A method for preparing a thermoelectric thin film by layer-by-layer self-assembly, comprising the steps of:

[0042] 1) Preparation of nanoflake suspensions of thermoelectric materials: first prepare the precursor materials of thermoelectric materials, namely Na x CoO 2 The synthesis of is identical with embodiment one;

[0043] Proton exchange, that is, step 1.: same as Example 1;

[0044] Ion exchange, i.e. step 2.: same as Example 1;

[0045] Stripping, that is, step 3.: same as Example 1;

[0046] Ca 2+ Doping, that is, step ⑤: centrifuge the suspension of the stripped product in step ③, take the supernatant, and add Ca 2+ , to obtain a well-mixed Ca 2+ Doped with Na x CoO 2 solution, see image 3 ;

[0047] 2) Select the substrate, which is the same as in Embodiment 1;

[0048] 3) Self-assembly to form a thermoelectric film:

[0049] Self-as...

Embodiment 3

[0051] This embodiment is basically the same as the previous embodiment, and the special features are:

[0052] see Figure 5 and Figure 6 A method for preparing a thermoelectric thin film by layer-by-layer self-assembly, comprising the steps of:

[0053] 1) Preparation of nanoflake suspensions of thermoelectric materials: first prepare the precursor materials of thermoelectric materials, namely Na x CoO 2 The synthesis of is identical with embodiment one;

[0054] Proton exchange, that is, step 1.: same as Example 1;

[0055] Ion exchange, i.e. step 2.: same as Example 1;

[0056] Stripping, that is, step 3.: same as Example 1;

[0057] Ag + Doping, that is, step ⑦: centrifuge the suspension of the stripped product in step ③, take the supernatant, and add Ag + , to get a homogeneously mixed Ag + Doped with Na x CoO 2 solution, see Figure 5 ;

[0058] 2) Select the substrate, which is the same as in Embodiment 1;

[0059] 3) Self-assembly to form a thermoelectr...

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Abstract

The invention discloses a method for preparing a thermoelectric film by using a layer by layer self-assembly. The method comprises the following steps of: (1) preparing nanometer sheet suspension liquid of a thermoelectric material: preparing a precursor material, then conducting proton exchange to obtain proton exchange products, conducting proton exchange on the proton exchange products to obtain intercalation products, and peeling the intercalation products to obtain peeling products; (2) selecting a substrate; (3) conducting self-assembly to form the thermoelectric film: centrifuging the nanometer sheet suspension liquid, using the substrate to conduct manual lifting, leaching lifting or soaking on centrifuged nanometer sheet suspension liquid, namely forming the thermoelectric film on the substrate. Different elements can be doped in a preparation process, kinds of thermoelectric films obtained by preparation are abundant, and the thermoelectric film is good in orientation and excellent in performance. Compared with other methods for preparing the thermoelectric film, the method is low in cost, simple in operation, capable of achieving mass production, good in controllability, and capable of preparing abundant and various high-performance target thermoelectric films.

Description

technical field [0001] The invention relates to a preparation process of a thermoelectric material, in particular to a method for preparing a thermoelectric thin film. Background technique [0002] Thermoelectric materials, one of the hottest topics of recent research, are materials that convert thermal energy directly into electrical energy. Compared with modern energy shortages, improving energy utilization is also an effective method, and thermoelectric materials can convert residual waste heat into electrical energy, which can improve energy utilization. The research of thermoelectric materials mainly focuses on improving the thermoelectric figure of merit of the material, that is, the ZT value, while low-dimensional thermoelectric materials usually have higher thermoelectric properties, mainly due to quantum effects, and effective doping can improve the mobility of carriers. At the same time, without significantly increasing the electron scattering, the thermal conduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08
Inventor 胡志宇严晓霞杨晓云
Owner SHANGHAI UNIV
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