Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of (211) preferred orientation Mo film

A technology of preferred orientation and thin film, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of large difference in mechanical and photoelectric properties of Mo thin film, and achieve good uniformity of large area of ​​thin film, improve Performance, evenly arranged effect

Inactive Publication Date: 2013-02-06
CHENGDU XINYUAN PV TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difference in sputtering conditions makes the mechanical and optoelectronic properties of Mo thin films quite different.
There is no report on (211) preferentially oriented Mo films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of (211) preferred orientation Mo film
  • Preparation method of (211) preferred orientation Mo film
  • Preparation method of (211) preferred orientation Mo film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1: An effective preparation method of a (211) preferentially oriented Mo thin film, the specific steps are:

[0031] (1) Clean the substrate:

[0032] The substrate (soda-lime glass, stainless steel or titanium alloy) was ultrasonically cleaned in acetone, ethanol, and deionized water for 10 min, then dried with nitrogen and placed in a sputtering vacuum chamber.

[0033] (2) Sputtering Mo film:

[0034] Install a high-purity Mo target (purity up to 99.99%) on the magnetron sputtering target gun, adjust the distance between the sputtering target gun and the substrate to be 50 mm, and pump the background vacuum to less than 3.0 × 10 -4 Pa, feed 99.995% high-purity argon to a pressure of 0.15 Pa, adjust the sputtering power to 5 W / cm 2 . After the glow stabilized, the target was pre-sputtered for 10 min to remove surface contamination, and then the film was deposited. The deposition was stopped after 20 min, and a Mo thin film with (211) preferred orientation...

Embodiment 2

[0037] Embodiment 2: An effective preparation method of a (211) preferentially oriented Mo thin film, the specific steps are:

[0038] (1) Clean the substrate:

[0039] The substrate (soda-lime glass, stainless steel or titanium alloy) was ultrasonically cleaned in acetone, ethanol, and deionized water for 10 min, then dried with nitrogen and placed in a sputtering vacuum chamber.

[0040] (2) Sputtering Mo film:

[0041] Install a high-purity Mo target (purity up to 99.99%) on the magnetron sputtering target gun, adjust the distance between the sputtering target gun and the substrate to be 50 mm, and pump the background vacuum to less than 3.0 × 10 -4 Pa, feed 99.995% high-purity argon to a pressure of 0.15 Pa, adjust the sputtering power to 5 W / cm 2 . After the glow stabilized, the target was pre-sputtered for 10 min to remove surface contamination, and then the film was deposited and stopped after 30 min to obtain a Mo film with (211) preferred orientation.

[0042] Th...

Embodiment 3

[0044] Embodiment 3: An effective preparation method of a (211) preferentially oriented Mo thin film, the specific steps are:

[0045] (1) Clean the substrate:

[0046] The substrate (soda-lime glass, stainless steel or titanium alloy) was ultrasonically cleaned in acetone, ethanol, and deionized water for 10 min, then dried with nitrogen and placed in a sputtering vacuum chamber.

[0047] (2) Sputtering Mo film:

[0048] Install a high-purity Mo target (purity up to 99.99%) on the magnetron sputtering target gun, adjust the distance between the sputtering target gun and the substrate to be 50 mm, and pump the background vacuum to less than 3.0 × 10 -4 Pa, feed 99.995% high-purity argon to a pressure of 0.15 Pa, adjust the sputtering power to 5 W / cm 2 . After the glow stabilized, the target was pre-sputtered for 10 min to remove surface contamination, and then the film was deposited and stopped after 40 min to obtain a Mo film with (211) preferred orientation.

[0049]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a (211) preferred orientation Mo film. The preparation method comprises the steps of: (1) cleaning a substrate, ultrasonically cleaning the substrate in acetone, ethanol and deionized water for 10 minutes respectively, and putting the substrate into a sputtering vacuum chamber after drying by nitrogen; (2) sputtering the Mo film, installing a high-purity Mo target on a magnetron sputtering target gun, adjusting a distance from the magnetron sputtering target gun to the substrate to be 50mm after purity achieves 99.99%, and vacuumizing a background in vacuum to be less than 3.0*10<-4>Pa, leading 99.995% of high-purity argon, adjusting sputtering work pressure to 0.15Pa and sputtering power to 5W / cm<2>, pre-sputtering the target for 10 minutes to remove surface contaminants after glow is stabilized, then beginning to deposit the film, and stopping after depositing for 20-40 minutes to obtain the Mo film with (211) preferred orientation. The film is high in crystal quality, even in surface appearance, low in resistivity and suitable for being used as a back electrode layer of a copper indium gallium diselenide film battery.

Description

technical field [0001] The invention relates to a method for preparing a Mo film, in particular to a method for preparing a (211) preferentially oriented Mo film. Background technique [0002] Solar energy has the advantages of cleanness, convenience, and inexhaustibility, and is the most promising new energy source in the 21st century. Cu(In,Ga)Se 2 (CIGS) is a solar cell with a light-absorbing layer, which has the characteristics of high photoelectric conversion efficiency, good cell stability, strong anti-radiation ability, and good low-light characteristics. Due to the extremely high light absorption coefficient of CIGS, 99% of sunlight can be absorbed by a micron-level thickness, which is very suitable for making thin-film solar cells. [0003] In the process of preparing CIGS solar cells, it is very important to obtain a high-quality back contact layer (Back Contact, BC). The quality of the BC layer directly affects the crystallization, growth and surface morpholog...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14
Inventor 余洲刘连李珂
Owner CHENGDU XINYUAN PV TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com