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Praseodymium-doped lutetium potassium tungstate laser crystal and preparation method thereof

A technology of laser crystal and tungstic acid, which is applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of less research on crystals, and achieve the effect of easy-to-obtain raw materials, excellent optical characteristics, and simple growth process

Inactive Publication Date: 2013-01-23
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Problems solved by technology

[0010] In the field of laser crystals today, although there are new research directions and new crystals appearing, for trivalent Pr 3+ Doped crystals are less studied

Method used

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Examples

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Embodiment 1

[0024] Example 1: with K 2 W 2 o 7 The doping concentration for flux growth is 5.0at.% Pr 3+ Pr 3+ :KLu(WO 4 ) 2 laser crystals.

[0025] Using the flux method, the raw materials are fully ground and placed in a φ60×50mm platinum crucible, and the molar ratio of the growth raw materials to the flux is: KLu(WO 4 ) 2 : K 2 W 2 o 7=1:3 (molar ratio), and about 2at% KF is added as an additive to improve the environment for crystal growth and reduce viscosity. The crystal growth temperature is between 985→955°C, with a cooling rate of 1°C / day and a crystal rotation speed of 10 revolutions / min, a size of 30×30×15mm is grown. 3 high-quality PR 3+ :KLu(WO 4 ) 2 crystals. The ICP (plasma emission spectrometry) analysis showed that the Pr in the crystal 3+ The ion content is 0.77 at%.

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Abstract

The invention provides a praseodymium-doped lutetium potassium tungstate laser crystal and a preparation method thereof. The crystal belongs to a monoclinic system, a space group is C2 / m, cell parameters are that beta is equal to 130.68 degrees, Z is equal to 4 and Dc is equal to 4.63g / cm<3>. The crystal can be grown by adopting a flux growth method. Large absorption is shown at 451nm in an absorption spectrum of the crystal, absorption cross section reaches 74.4*10<-20>cm<2>, and absorption half-peak width reaches 8nm. The crystal has strong emission in visible light wave band and near infrared wave band, emission cross section at 1073nm reaches 24.3*10<-20>cm<2>, the crystal is expected to become a new laser crystal, and practical application can be obtained.

Description

technical field [0001] The invention relates to the technical field of optoelectronic functional materials, in particular to a laser crystal material which is a solid-state laser working material with a wide absorption band and is suitable for GaN diode laser pumping. Background technique [0002] Since T. H. Maiman of the United States invented the world's first laser with artificial ruby ​​crystals in the laboratory in 1960, all-solid-state lasers have developed rapidly. And in 1961 for the first time in CaF 2 :Sm 3+ The laser output achieved in the crystal has opened the prelude to the vigorous study of trivalent rare earth ions as active ions for stimulated emission in solid-state laser crystals. By the middle of the 1980s, with the rapid development of semiconductor diodes, the diode laser (LD) developed with its excellent performance was used as a new pump source to replace the traditional flash lamp pump source, and was widely introduced into lasers, greatly It im...

Claims

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Application Information

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IPC IPC(8): C30B29/32C30B9/12
Inventor 王国富余意黄溢声张莉珍林州斌
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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