Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistance change memory and preparation method thereof

A resistive variable memory and resistive variable technology, which is applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problem that multi-value storage is not easy to realize, and achieve the effect of increasing storage density and keeping volume constant

Active Publication Date: 2013-01-16
PEKING UNIV
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem that multi-value storage is not easy to realize in the above technologies, the embodiment of the present invention provides a resistive variable memory and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance change memory and preparation method thereof
  • Resistance change memory and preparation method thereof
  • Resistance change memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0015] see figure 1 , figure 1 A schematic structural diagram of a multi-valued resistive memory according to an embodiment of the present invention is shown. As shown in the figure, the multi-valued resistive variable memory according to the embodiment of the present invention includes: a substrate 4 and a plurality of memory cells spaced apart from each other on the substrate, and each memory cell includes a lower electrode 3, a resistive variable layer 2 and an u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a resistance change memory and a preparation method thereof. The resistance change memory comprises a substrate and a plurality of memory units at intervals on the substrate; each memory unit comprises a lower electrode, a resistance change layer and an upper electrode; the lower electrode is positioned on the substrate; the resistance change layer is positioned on the lower electrode; the upper electrode is positioned on the resistance change layer; and the resistance change layer comprises a resistance change material part and at least one doped resistance change part doped with elements for adjusting a resistance state. The invention also discloses a preparation method for the resistance change memory. According to the resistance change memory and the preparation method thereof, the resistance change layer is not made of a single resistance change material, and a plurality of resistance states can be generated according to different voltage in the set operation process of a resistance changer, so that the memory density of the resistance changer is increased; and meanwhile, the size of the resistance changer is not required to be increased.

Description

technical field [0001] The present invention relates to the field of semiconductor devices, in particular to a resistive variable memory and a manufacturing method thereof, and more specifically to a multi-value resistive variable memory and a preparation method thereof. Background technique [0002] Memory is an indispensable part of various electronic equipment systems, and is widely used in various mobile devices, such as mobile phones, notebooks, and handheld computers. Generally speaking, the memory uses high level and low level to represent 1 and 0 respectively, so as to realize the storage of information. [0003] At present, some of the memories on the market are based on floating gate flash memory with polysilicon gates mixed with other substances (such as boron and phosphorus) as floating gates and control gates. However, flash memory has developed rapidly in the past two decades, and the size of flash memory cells has shrunk sharply. Flash memory is facing a huge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10B63/80H10N70/20H10N70/826H10N70/883H10N70/8833H10N70/041H10N70/063H10B63/00H10N70/021
Inventor 蔡一茂毛俊武慧薇黄如
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com