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A method for forming a metal-oxide-metal capacitor

A technology of metal capacitors and oxides, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of circuit back-end layout and wiring, increase in capacitor area, increase in metal layers, etc., to achieve fewer metal layers, The effect of reducing distance and small area

Active Publication Date: 2018-05-29
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the value of k is fixed in a specific process, and the metal spacing is limited by design rules and processes, if the capacitance of the above-mentioned finger-plus-stack structure can be increased, the only way to increase the capacitance is by increasing the length or number of finger plates or increasing the stacked metal layer method to increase capacitance
The former will lead to an increase in the capacitor area, and the latter will increase the metal layer it occupies and affect the layout and routing of the circuit at the back end

Method used

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  • A method for forming a metal-oxide-metal capacitor
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Embodiment Construction

[0035] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0036] The present invention uses schematic diagrams to describe the specific structures and methods in detail. When describing the examples of the present invention in detail, for the convenience of explanation, the schematic diagrams are not partially enlarged according to the general scale, which should not be used as a limitation of the present invention.

[0037] see figure 1 , figure 1 It is a top view of the structure of a metal-oxide-metal (MOM) capacitor in an embodiment of the present invention. As shown in the figure, the MOM capacitor includes a first...

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Abstract

The invention provides a method for forming a metal-oxide-metal (MOM) capacitor, which includes providing a wafer substrate; depositing a metal layer on the wafer substrate; Forming the first electrode and the second electrode respectively; depositing an insulating dielectric layer on the surface of the wafer to form a MOM capacitor. Through the method of the present invention, it is possible to obtain a pattern spacing smaller than the constraints of the photolithography process, which greatly reduces the distance between two adjacent electrode finger plates, thereby increasing the capacity of the MOM capacitor while reducing the chip occupied by the capacitor area.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for forming a metal-oxide-metal (metal-oxide-meter, MOM for short) capacitor. Background technique [0002] In semiconductor integrated circuits, integrated capacitors fabricated on the same chip as circuits are widely used. Its form mainly includes metal-insulator-metal (metal-insulator-metal, referred to as MIM) and MOM capacitors. Among them, MIM capacitors use upper and lower metal as capacitor plates, and at least two layers of metal are required. The capacitance is mainly composed of The area occupied by the capacitor is determined. Therefore, the use of MIM capacitors in occasions that require large capacitors will cause a significant increase in cost; while MOM capacitors can be fabricated in a relatively small area with a combination of finger structure and stacking. Therefore, designers prefer this type of capacitor when designing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/02
Inventor 王全全冯溪周伟
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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