Defect solving means for metal hard photomask structure in 40/45 nanometer technology

Abstract

The invention relates to a defect solving means for a metal hard photomask structure, and particularly relates to a defect solving means for a metal hard photomask structure in 40 / 45 nanometer technology. According to the defect solving means for a metal hard photomask structure in 40 / 45 nanometer technology, after the etching of a composite structure, a plasma silicon wafer desorption method is used instead of the traditional direct-current silicon wafer desorption method to remove charges remaining on the surface of the composite structure due to etching, thereby solving the problem of metal-induced power failure caused by residual charge adsorption defect and improving the production quality and efficiency.

Description

technical field [0001] The invention relates to a defect solution for a metal hard mask structure, in particular to a defect solution for a 40 / 45 nanometer process metal hard mask structure. Background technique [0002] At present, starting from the 65nm process technology, the back-end dual damascene process mostly adopts low dielectric constant or copper process plus metal hard mask layer. However, when choosing the process of metal hard mask, it will face many problems that traditional processes did not have before. The problems encountered, such as after the metal hard mask is etched, there will be residual charges on the metal surface, and the residual charges will attract defects, which are difficult to remove even in subsequent cleaning steps, eventually causing metal fractures. Wire. like Figure 1a-1c It is a schematic structural flow diagram of the existing 40 / 45 nanometer technology DC desorption silicon wafer method. Metal hard mask after etching, such as Fi...

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Problems solved by technology

Metal hard mask after etching, such as Figure 1a As shown, under the voltage of 1000V, the surface of the composite structure 12 deposited on the second dielectric layer 11 remains part of the charge 13; as Figure 1b As shown, the DC voltage is reduced to 0V, and the number of charges 13 remaining on the surface of the composite structure 12 deposited on the second dielectric layer 11 decreases; as Figure 1c As shown, the DC voltage continues to be reduced to -600V, the number of charges 13 remaining on the surface of the composite structure 12 deposited on the second dielectric layer 11 continues to decrease, but still exists; therefore, using the traditional DC desorption silicon wafer method Can not eliminate the residual charge, and eventually will cause metal disconnection

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