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Piezoresistive micromechanical sensor device and corresponding measurement method

A technology of micromechanical sensor and measurement method, which is applied in measurement device, measurement acceleration, speed/acceleration/impact measurement, etc., can solve problems such as process consumption, and achieve the effect of favorable cost, high mechanical sensitivity, and simplified technical realization.

Inactive Publication Date: 2016-10-19
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially the narrowest possible trench isolation (STI) is required between beams PR1, B, PR2, which means increased process costs

Method used

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  • Piezoresistive micromechanical sensor device and corresponding measurement method
  • Piezoresistive micromechanical sensor device and corresponding measurement method
  • Piezoresistive micromechanical sensor device and corresponding measurement method

Examples

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Embodiment Construction

[0025] In the figures, identical reference numbers designate identical or functionally identical components.

[0026] figure 1 is a top view of a piezoresistive micromechanical sensor device in the form of a micromechanical acceleration sensor device according to a first embodiment of the invention, and Figure 2a -c is based on figure 1 A cross-section along lines AA1', BB' and CC' of a piezoresistive micromechanical sensor device in the form of a micromachined acceleration sensor device.

[0027] exist figure 1 , reference numeral 5 shows a piezoresistive micromachined acceleration sensor. Starting from the substrate 1, two uniformly doped piezoresistive beams 1a, 1b extend to the anti-seismic mass 3, whereby the anti-seismic mass is connected to the substrate 1 via the beams 1a, 1b. There is a cavity K below the beams 1 a , 1 b and the seismic mass 3 .

[0028] The insulating trench G between the piezoresistive beams 1 a , 1 b can also be embodied as a narrow insula...

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Abstract

The invention relates to a piezoresistive micromechanical sensor device and a corresponding measuring method. The piezoresistive micromechanical sensor device has: a substrate (1); a deflectably suspended anti-seismic mass (3) on the substrate (1); at least one piezoresistive beam (1a) arranged between the substrate and the anti-seismic mass , 1b; 1a', 1b'), said at least one piezoresistive beam undergoes a change in resistance when the seismic mass deflects; wherein the piezoresistive beam (1a, 1b; 1a', 1b') has lateral and / or upper and / or the lower conductor tracks (2a, 2b; 2a', 2b'), which at least partially cover the piezoresistive beam and extend into the region of the substrate; and the measuring device (M1; M2 ; M1'; M1''), the measuring device is electrically connected to the substrate and the printed conductors and is configured to measure the resistance change through the circuit path from the substrate through the piezoresistive beam and from the piezoresistive The transverse beams are routed by lateral and / or upper and / or lower conductor tracks.

Description

technical field [0001] The invention relates to a piezoresistive micromechanical sensor device and a corresponding measuring method. Background technique [0002] Although applicable to any piezoresistive micromechanical sensor device, the invention and the problem on which it is based are explained with reference to a piezoresistive micromechanical acceleration sensor. [0003] Current acceleration sensors are usually analyzed capacitively. But equally practical piezoresistive analysis offers greater potential in terms of the ever-wider miniaturization that is being pursued. In principle, in the case of piezoresistive acceleration sensors (referred to here as piezoresistive acceleration sensors), the following two variants are to be distinguished. [0004] A variant consists in structured doping, in which the piezoresistors are doped at those points on the crossbar at which the maximum mechanical stress occurs in the event of a deflection. [0005] Another variant consis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/08G01P15/12
CPCG01P15/0802G01P15/123G01P15/08G01P15/12G01P15/09
Inventor R.诺伊尔C.雷蒂希A.特劳特曼D.C.梅塞尔A.鲁曼M.恩格泽A.费伊
Owner ROBERT BOSCH GMBH
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