Preparation method of overlong copper nanowire and conductive copper nanowire film
A copper nanowire, ultra-long technology, applied in the field of materials, can solve problems such as difficult dispersion, difficult application, harsh reaction conditions, etc.
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Embodiment 1
[0022] Dissolve 0.5g of hexadecyltrimethylammonium bromide in 8.0g of hexadecylamine completely at 180°C, then add 0.2g of copper acetylacetonate as a copper source; use a Pt-coated silicon wafer as a catalyst, at 140°C The reaction was carried out at high temperature for 10 h, and after cooling to room temperature, the obtained sample was taken out and washed several times with toluene. The obtained brown-red solid was vacuum-dried at 80° C. for 2 hours.
Embodiment 2
[0024] Dissolve 0.5g of hexadecyltrimethylammonium bromide in 8.0g of hexadecylamine completely at 180°C, then add 0.2g of copper acetylacetonate as a copper source, and use a Pt-coated silicon wafer as a catalyst at 150°C The reaction was carried out at high temperature for 10 h, and after cooling to room temperature, the obtained sample was taken out and washed several times with toluene. The obtained brown-red solid was vacuum-dried at 80° C. for 2 hours.
Embodiment 3
[0026] Dissolve 0.5g of hexadecyltrimethylammonium bromide in 8.0g of hexadecylamine completely at 180°C, then add 0.2g of copper acetylacetonate as a copper source, and use a Pt-coated silicon wafer as a catalyst at 160°C Reaction at high temperature for 10h, after cooling to room temperature, the resulting sample was taken out and washed several times with toluene. The obtained brown-red solid was vacuum-dried at 80° C. for 2 hours.
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