Device and method for growing large-size high-temperature crystals by real-time adjustable temperature gradient method

Abstract

The invention discloses a device for growing large-size and high-temperature crystals with a real-time adjustable temperature gradient method and the method. The device comprises an upper insulation cover is arranged at the top end of a periphery insulation cylinder and a lower insulation cover is arranged at the bottom end of the periphery insulation cylinder, a crucible is arranged at a center position inside the periphery insulation cylinder, seed crystal installation grooves are arranged on a base of the crucible, a crucible support rod is fixed at the bottom of a crucible bracket, an upper growth gradient provision heating element is arranged on the upper insulation cover, a lower growth gradient provision heating element is arranged on the lower insulation cover, cylindrical high temperature environment provision heating elements are arranged on the lateral walls of the periphery insulation cylinder, the cylindrical high temperature environment provision heating elements are sleeved on the outside of the crucible and penetrate through the upper insulation covers, a plurality of first thermocouples are arranged evenly from left to right uniformly at intervals at the central position of the upper growth gradient provision heating element, and a plurality of thermocouples are arranged from top to bottom evenly at intervals on the cylindrical lateral walls of the cylindrical high temperature environment provision heating elements and penetrate through the periphery insulation cylinder. According to the device for growing large-size and high-temperature crystals with the real-time adjustable temperature gradient method and the method, axial and radial temperature gradients of a whole temperature field can be adjusted in real time, and single crystals with high qualities are obtained.

Description

technical field [0001] The invention relates to the fields of semiconductor materials and crystal growth. The invention discloses a device for growing crystals by a real-time adjustable temperature gradient method. The invention also discloses a method for growing crystals by a real-time adjustable temperature gradient method. Background technique [0002] At present, the high temperature oxide or fluoride crystal growth methods mainly include pulling method, heat exchange method, crucible descent method and temperature gradient method. [0003] 1. The pulling method was invented by Czochralski in 1918, so it is also called "Chuklarski method", or CZ method for short. It is a method of growing crystals by pulling the seed crystal from the melt. One of the most important methods for single crystals. The molten material is contained in the heated crucible, and the seed rod is inserted into the melt from top to bottom with the seed crystal. Since the melt near the solid-liquid...

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Problems solved by technology

[0011]2. Due to the large gradient, the growth interface is excessively raised, the thermal stress is large, and the dislocation value increase causes the dislocation density to be too large, and the single crystal property is not good;

[0012]3. Large temperature gradient and high energy consumption

[0019]1. The equipment conditions are high, the whole process is complicated, the crystal growth cycle is long, a large amount of helium is required as a coolant, and the cost is high;

[0020]2. The temperature gradient distribution is opposite to the gravity field, which is not conducive to the removal of impurities;

[0021] 3. The crystal is in contact with the crucible, the stress of the crystal is large, and it is easy to parasitize and nucleate to cause polycrystal;

[0022]4. Crystal growth cannot be controlled and observed in real time;

[0023]5. The growth interface is too convex, with large thermal stress and dislocation

[0032]1. It is not suitable for materials with negative expansion coefficient, and materials with liquid density greater than solid density;

[0033]2. Due to the action of the crucible, it is easy to form stress, parasitic nucleation and pollution;

[0034]3. Not easy to observe;

[0035]4. There is mechanical disturbance in the descending mechanism

[0042]1. The temperature gradient distribution is opposite to the gravity field, which is not conducive to the removal of impurities;

[0043]2. When the crystal is in contact with the crucible, the stress of the crystal is large, and it is easy to cause polycrystal by parasitic nucleation;

[0044]3. Crystal growth cannot be controlled and observed in real time;

[0045]4. The growth interface is too convex, with large thermal stress and dislocation

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