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Method for rescuing broken wire during silicon wafer linear cutting

A wire cutting and silicon wafer technology, which is applied to fine working devices, working accessories, stone processing equipment, etc., can solve the problems of poor rescue success rate, unsatisfactory rescue effect, and inability to accurately and smoothly set the knife.

Active Publication Date: 2012-10-31
GCL POLY ENERGY HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a rescue method usually not only has a poor rescue success rate, but also brings color difference and line marks
For example, after the knife setting, the steel wire is not completely in the original cutting knife seam position, resulting in the deviation of the cutting position and the formation of line marks
Especially for silicon wafers whose cutting depth is greater than or equal to 30% of the total cutting stroke of silicon crystal ingot processing, because the cutting edges start to stick together, it is impossible to accurately and smoothly set the knife, which will cause a large number of line marks or color difference films or even waste tablets, the rescue effect is not ideal

Method used

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  • Method for rescuing broken wire during silicon wafer linear cutting
  • Method for rescuing broken wire during silicon wafer linear cutting
  • Method for rescuing broken wire during silicon wafer linear cutting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] When the wire is broken at 50.588mm, the silicon ingot is raised at a speed of 10mm / min until the knife edge is located under the wire mesh and is about 20mm away from the wire mesh. Adjust the line speed to 0.5m / s and run 0.5m to level the line network. Open the mortar and rinse the silicon wafer evenly for 5 minutes, cut off the broken wire mesh, keep the steel wire in the gap of the silicon wafer, reserve 10-20mm wire mesh at the wire inlet end of the guide wheel head, rearrange the wire mesh and turn on the mortar back and forth to heat up, so that The new wiring network is fully covered with mortar, and then the silicon crystal rod is pressed down at a table speed of 5mm / min until the knife edge is located under the wire mesh and 6mm away from the wire mesh, and the steel wire segment left in the gap of the silicon wafer is removed. Then press down to the original cutting depth and then press down 0.5mm, level the wire mesh again at a line speed of 0.5m / s, let all ...

Embodiment 2

[0061] When a wire breakage occurs at a cut of 71.056mm, raise the silicon ingot at a speed of 10mm / min until the knife edge is located under the wire mesh and is about 16mm away from the wire mesh. Adjust the line speed to 0.5m / s and run 0.5m to level the line network. Open the mortar and rinse the silicon wafer evenly for 5 minutes, cut off the broken wire mesh, keep the steel wire in the gap of the silicon wafer, reserve 10-20mm wire mesh at the wire inlet end of the guide wheel head, rearrange the wire mesh and turn on the mortar back and forth to heat up, so that The new wiring network is fully covered with mortar, and then the silicon crystal rod is pressed down at a table speed of 5mm / min until the knife edge is located under the wire mesh and 6mm away from the wire mesh, and the steel wire segment left in the gap of the silicon wafer is removed. Then press down to the original cutting depth and then press down 0.5mm, level the wire mesh again at a line speed of 0.5m / s,...

Embodiment 3

[0065] When the wire is broken when the cutting is 106.103mm, the silicon ingot is lifted at a speed of 10mm / min until the knife edge is located under the wire mesh and is about 15mm away from the wire mesh. Adjust the line speed to 1m / s and run 0.5m to level the line network. Open the mortar and rinse the silicon wafer evenly for 5 minutes, cut off the broken wire mesh, keep the steel wire in the gap of the silicon wafer, reserve 10-20mm wire mesh at the wire inlet end of the guide wheel head, rearrange the wire mesh and turn on the mortar back and forth to heat up, so that The new wiring network is fully covered with mortar, and then the silicon crystal rod is pressed down at a table speed of 5mm / min until the knife edge is located under the wire mesh and 6mm away from the wire mesh, and the steel wire segment left in the gap of the silicon wafer is removed. Then press down to the original cutting depth and then press down 0.5mm, level the wire mesh again at a line speed of ...

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PUM

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Abstract

The invention relates to a method for rescuing broken wire accident in the processing process of a silicon wafer slicing machine. The invention particularly relates to a method for remaining the broken steel wire in the silicon wafer subjected to the broken wire accident to fix the position of the silicon wafer so as to contribute to rewiring and tool setting.

Description

technical field [0001] The invention relates to a rescue method for rescuing a disconnection accident in the processing process of a silicon chip slicer. Specifically, the present invention relates to a method for retaining broken steel wires in silicon wafers in which wire breaking accidents occur, for fixing the position of the silicon wafers to facilitate rewiring and tool setting. Background technique [0002] With the promotion of green energy in various countries around the world and the extraordinary development of the semiconductor industry in recent years, the supply of the silicon wafer market has become extremely unbalanced, and the backward cutting and processing capabilities and production capacity have seriously restricted the development of the industry. The new silicon wafer multi-wire cutting technology that has emerged in recent years is now the key technology for the upstream production of silicon wafers (wafers). It has the characteristics of high cutting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D7/00B28D5/04
Inventor 陈益冬
Owner GCL POLY ENERGY HLDG
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