Channel type power metal oxide semi-conductor structure with fast switching capacity and manufacture method

Abstract

Provided are a channel type power metal oxide semi-conductor structure with fast switching capacity and a manufacture method. The method includes the following steps: first, forming an epitaxial layer of a first electric conducting type on a substrate, and then, forming a plurality of gate structures in the epitaxial layer; forming a shallow doping area with the first electric conducting type on the surface of the epitaxial layer, and then forming a shielding structure on the shallow doping area; forming a plurality of well areas with a second electric conducting type in the epitaxial layer by using the shielding structure, and then forming a source doping area with the first electric conducting type on the surface of the well areas; doping concentration of the shallow doping area is smaller than that of the source doping area and the well areas, and the doping concentration of the shallow doping area is larger than that of the epitaxial layer. The channel type power metal oxide semi-conductor structure with the fast switching capacity and the manufacture method can effectively reduce forward voltage drop (VSD) of a source drain diode and obtain channel type power semi-conductors with the fast switching capacity and low switching power loss.

Description

technical field [0001] The invention relates to a trench type power metal oxide semiconductor structure and a manufacturing method thereof, in particular to a power metal oxide semiconductor structure with fast switching capability and a manufacturing method thereof. Background technique [0002] In the application field of trench power metal oxide semiconductors, the performance of switching speed has been paid more and more attention. The improvement of this characteristic can significantly improve the power loss during switching in high frequency circuit operation. figure 1 It is a cross-sectional view of a traditional n-channel gate trench power metal oxide half field effect transistor (MOSFET). The structure is composed of an n-type drain region 110 , a p-type body region 120 , an n-type source region 130 , a metal layer 140 connected to the source electrode, a gate oxide layer 150 and a gate compound crystal structure 160 . [0003] When the metal oxide semiconductor ...

AI Technical Summary

Problems solved by technology

Due to the traditional trench power semiconductor structure, its source-drain diode forward voltage drop (V SD ) will be limited to about 0.75 volts, which cannot be greatly reduced, so it takes a long time to remove the excess minority carriers at the junction, and thus causes the reverse recovery (Reverse Recovery) capacity is limited, which in turn affects the switching speed of the power MOSFET (MOSFET), resulting in increased power loss during switching

Images