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Heat dissipation interface material used for packaging of high-power LED (light emitting diode) lamp and preparation method thereof

A technology of LED lamps and interface materials, applied in cooling/heating devices of lighting devices, lighting and heating equipment, chemical instruments and methods, etc., can solve the problem of deterioration of the comprehensive performance of thermal conductive silicone grease, easy oxidation of metal particles, and difficulty in uniformity Tiling and other issues to achieve miniaturization, avoid contact gaps, and reduce the effect of interface contact thermal resistance

Active Publication Date: 2014-03-26
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the one hand, metal particles of this type of thermal interface material are easily oxidized at high temperature, which leads to the deterioration of the overall performance of thermal grease; on the other hand, this type of thermal interface material is a paste, which is not easy to spread evenly when used , and in long-term work, it is prone to problems such as agglomeration, which seriously affect its heat dissipation efficiency

Method used

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  • Heat dissipation interface material used for packaging of high-power LED (light emitting diode) lamp and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0018] 1) 0.05 parts by weight of silane coupling agent KH-550 was dissolved in 95wt% ethanol to prepare a 25wt% solution. Stir continuously. After dissolving, add 0.5 parts by weight of graphene microchips and place in a 60°C water bath , sonicated for about 4 hours. After the solvent is evaporated, put it in an evaporating dish, put it into an oven, dry it at 120°C for 10 hours, and then dry it at 150°C for 2 hours to obtain functionalized graphene microchips for use;

[0019] 2) Repeatedly knead 100 parts by weight of component A silicone resin with the above-mentioned 0.5 parts by weight of functionalized graphene and 20 parts by weight of simethicone in a double-roll mill until uniform. Then add 2.0 parts by weight of B-component silicone resin, after mixing evenly, collect the mixture on the roller shaft, place it in a mold with a polyester film in the inner cavity, and press it into a tablet in a flat vulcanizer, the condition is : The mold temperature is 120°C, the pr...

Embodiment 2

[0023] 1) 0.1 parts by weight of silane coupling agent KH-550 was dissolved in 95wt% ethanol to prepare a 25wt% solution. Stir continuously. After dissolving, add 1.0 parts by weight of graphene microchips and place in a 60°C water bath , sonicated for about 4 hours. After the solvent is evaporated, put it in an evaporating dish, put it into an oven, dry it at 120°C for 10 hours, and then dry it at 150°C for 2 hours to obtain functionalized graphene microchips for use;

[0024] 2) Repeatedly knead 100 parts by weight of component A silicone resin with the above-mentioned 1.0 parts by weight of functionalized graphene and 20 parts by weight of simethicone in a double-roll mill until uniform. Then add 2.0 parts by weight of B-component silicone resin, after mixing evenly, collect the mixture on the roller shaft, place it in a mold with a polyester film in the inner cavity, and press it into a tablet in a flat vulcanizer, the condition is : The mold temperature is 120°C, the pre...

Embodiment 3

[0027] 1) 0.15 parts by weight of silane coupling agent KH-550 was dissolved in 95wt% ethanol to prepare a 25wt% solution. Stir continuously. After dissolving, add 1.5 parts by weight of graphene microchips and place in a 60°C water bath , sonicated for about 4 hours. After the solvent is evaporated, put it in an evaporating dish, put it into an oven, dry it at 120°C for 10 hours, and then dry it at 150°C for 2 hours to obtain functionalized graphene microchips for use;

[0028]2) Repeatedly knead 100 parts by weight of component A silicone resin with the above-mentioned 1.5 parts by weight of functionalized graphene and 25 parts by weight of simethicone in a double-roll mill for about 40 minutes until uniform. Then add 2.0 parts by weight of B-component silicone resin, after mixing evenly, collect the mixture on the roller shaft, place it in a mold with a polyester film in the inner cavity, and press it into a tablet in a flat vulcanizer, the condition is : The mold temperat...

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Abstract

The invention discloses heat dissipation interface material used for packaging of a high-power LED (light emitting diode) lamp and a preparation method thereof. The heat dissipation interface material is obtained by fully mixing flexible AB double-component condensed type room temperature curable silicone resin as matrix and dimethyl silicone oil and functionalized graphene microchip as thermally conductive filler. The unctionalized graphene microchip and silicone resin are mixed thoroughly on a two-roll mill to enable the functionalized graphene microchip to be dispersed in the silicon resin matrix uniformly so as to prepare the heat dissipation interface material with excellent performance. According to the heat dissipation interface material, the contact gap betweena LED chip module metal heat radiating base and a heat dissipation structure of a lamp shell is avoided and the interfacial thermal contact resistance is reduced, thereby forming highly efficient heat dissipation channel and accelerating heat transfer. The material provided by the invention has great benefit for the power, miniaturization, improvement of the reliability of product and increase of the life expectancy of the LED lamp.

Description

technical field [0001] The invention belongs to the technical field of heat dissipation materials, and in particular relates to a heat dissipation interface material used for packaging high-power LED lamps and a preparation method thereof. Background technique [0002] With the development of LED to high light intensity and high power, its heat dissipation problem is becoming more and more prominent. At present, the input power of commercialized power LEDs is generally 1W~3W, the chip area is 1mm×1mm, and the heat flux density reaches 100~300 W / cm 2 . The resulting heat dissipation problem has seriously affected the luminous efficiency and service life of the LED. In particular, the luminous brightness of a single LED chip can no longer meet the needs of lighting brightness. In order to solve this problem, it is inevitable to develop high-brightness LED lighting products and develop power LEDs used in groups. This puts forward higher requirements for the timely derivation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L83/04C08K9/06C08K9/02C08K3/04C01B31/04F21V29/00F21Y101/02C01B32/19C01B32/194F21V29/76F21V29/85
Inventor 张海燕李春辉
Owner GUANGDONG UNIV OF TECH
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