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PbSe colloidal quantum dot based array Hall element and preparation method thereof

A technology of colloidal quantum dots and Hall elements, applied in Hall effect devices, electrical components, semiconductor devices, etc., to achieve the effect of small size, simple and flexible production

Inactive Publication Date: 2014-07-23
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] After searching, it is found that there is no report on the array Hall element in my country that uses PbSe colloidal quantum dots as a sensitive material and is integrated on a flexible substrate.

Method used

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  • PbSe colloidal quantum dot based array Hall element and preparation method thereof
  • PbSe colloidal quantum dot based array Hall element and preparation method thereof
  • PbSe colloidal quantum dot based array Hall element and preparation method thereof

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Embodiment Construction

[0033] The following are only preferred embodiments of the present invention, and should not limit the scope of the present invention. That is, all equivalent changes and modifications made according to the patent scope of the present application shall still fall within the scope covered by the present patent. The structure and manufacturing method of the present invention are specifically described below with examples.

[0034] The present invention takes figure 1 The overall structural scheme shown. Taking the 4×4 dot matrix as an example, 2 is the electrode of the current input terminal, and 7 is the electrode of the current output terminal. Since the input voltage of each PbSe colloidal quantum dot sensitive unit 8 is the same, in order to simplify the circuit, each PbSe colloidal quantum dot sensitive unit 8 is connected in series. Similarly, for the 4×4 dot matrix, since the Hall voltage value of each PbSe colloidal quantum dot sensitive unit 8 is to be read in turn, ...

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Abstract

The invention relates to a novel structured PbSe colloidal quantum dot based array Hall element and preparation method thereof. The PbSe colloidal quantum dot based array Hall element is small and high in flexibility, can be bent optionally and the like. A plurality of PbSe colloidal quantum dot sensing units are serially connected and are arranged in array on a flexible substrate. One end of each PbSe colloidal quantum dot sensing unit is provided with a current input end electrode. The other end of each PbSe colloidal quantum dot sensing unit is provided with a current output end electrode. Signals of each PbSe colloidal quantum dot sensing unit are output through a signal output electrode I of each PbSe colloidal quantum dot sensing unit. The signal output electrode I and a signal output electrode II of PbSe colloidal quantum dot sensing unit are integrally distributed and are connected with a signal output end port of each PbSe colloidal quantum dot sensing unit. The preparation method of the PbSe colloidal quantum dot sensing units includes: preparing a single PbSe colloidal quantum dot sensing unit 8, evaporating the signal output electrode I and the signal output electrode II, plating a protective layer on the signal output electrode I and the signal output electrode II, and evaporating the current input end electrode and the current output end electrode.

Description

technical field [0001] The invention relates to a novel structure array Hall element based on PbSe colloidal quantum dots and a manufacturing method thereof. This Hall element uses PbSe colloidal quantum dot material, arranged in an array, and has the characteristics of good flexibility. It has the advantages of small structure, arbitrary bending and high sensitivity. Background technique [0002] The Hall element is a magnetic sensitive element that performs magnetoelectric conversion according to the Hall effect. It has the advantages of sensitivity to magnetic field, simple structure, small size, wide frequency response, large output voltage change and long service life, so it is widely used in electromagnetic measurement, non-electrical measurement, automatic control, computing and communication devices and other fields. [0003] At present, the material of the Hall element is mostly semiconductor materials such as germanium, silicon, gallium arsenide, indium arsenide,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/22H01L43/10H01L43/06H01L43/14
Inventor 张宇翟微微张佳全于伟泳王一丁张铁强林晓珑冯毅
Owner JILIN UNIV
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