Normal chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching and normal chip single-faced three-dimensional circuit encapsulation structure

Abstract

The invention relates to a normal chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching. The method includes: taking a metal substrate; preplating copper to the metal substrate surface; coating with green paint; partially removing the green paint on the front of the metal substrate; electroplating inert a metal circuit layer; electroplating a metal circuit layer; coating with green paint; partially removing the green paint on the front of the metal substrate; electroplating a metal circuit layer; coating with green paint; partially removing the green paint on the front of the metal substrate; coating a circuit screen plate; performing metallization pretreatment; removing the circuit screen plate; electroplating metal circuit layer; coating bonding material; mounting a chip; performing metal circuit bonding; encapsulating; partially removing the green paint on the back of the metal substrate; performing chemical etching; electroplating a metal circuit layer; coating with green paint; reserving holes on the green paint; cleaning; attaching balls; and cutting finished products. The normal chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching has the advantages that manufacture cost is lowered, safety and reliability of encapsulation are enhanced, environmental pollution is reduced, and design and manufacture of high density circuit are really achieved.

Description

technical field [0001] The invention relates to a method for manufacturing a single-sided three-dimensional circuit of a front-mounted chip by sealing first and then etching and the packaging structure thereof, belonging to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 85 , take a substrate made of glass fiber material, [0004] Step two, see Figure 86 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 87 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 88 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 89 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 90 , co...

AI Technical Summary

Problems solved by technology

[0019]3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the reliability and safety ability or is the level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 97 , the best production capacity is that the etching gap is approximately equal to the thickness of the etched object), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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