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Positive high-voltage charge pump

A technology of charge pump and positive high voltage, which is applied in the direction of conversion equipment without intermediate conversion to AC

Active Publication Date: 2012-10-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In a standard integrated circuit process, NMOS are all fabricated on the same substrate, which causes serious substrate bias effects in the charge pump where NMOS is used as a switch

Method used

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Embodiment Construction

[0032] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0033] The core idea of ​​the present invention is to increase the auxiliary circuit to reduce the PMOS gate voltage in the charge pump circuit, wherein the main branch of the PMOS charge pump, under the control of the PMOS gate voltage control auxiliary branch, carries out unidirectional flow of charges, and the accumulated charge reaches The function of raising the voltage; the auxiliary branch of PMOS gate voltage control uses the voltage node in the main branch of the PMOS charge pump and the input control signal to control the gate voltage of the PMOS switch tube in the main branch of the PMOS charge pump to increase the voltage between the gate and the source The dif...

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PUM

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Abstract

The invention relates to the technical field of an integrated circuit, and discloses a positive high-voltage charge pump. The charge pump comprises a charge pump circuit which is connected in multi-level series and a one-level output circuit; and the input end of the output circuit is connected with the output end of the last level charge pump circuit. According to the charge pump provided by the invention, an auxiliary circuit is added to reduce the PMOS (P-channel Metal Oxide Semiconductor) grid voltage in the charge pump circuit and increase the voltage difference of the grid electrode and the source electrode, thus, the PMOS grid voltage can be zero when the switch is switched on, and the voltage loss can be reduced during switching on and the PMOS conductive performance can be improved, thereby enhancing the capability of switch pumping charge.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a positive high-voltage charge pump. Background technique [0002] As one of the basic modules of EEPROM / Flash memory, the charge pump circuit largely determines the initial programming / erasing / reading speed of EEPROM / Flash. With the advancement of integrated circuit manufacturing technology and the pursuit of low power consumption, the power supply voltage of integrated circuits continues to decrease. On the other hand, in the Flash memory, the high voltage required for the programming / erasing operation of the unit has decreased, but much slower than the decreasing speed of the power supply voltage. This makes the charge pump circuit gradually show its important role and status in the continuous development of integrated circuits. In the design of EEPROM / Flash memory, the research on various high-performance charge pumps has gradually become one of the hot spots in...

Claims

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Application Information

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IPC IPC(8): H02M3/07
Inventor 王源丁健平高晓敏黄鹏杜刚康晋峰张兴
Owner PEKING UNIV
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