AlGaInP light-emitting diode (LED) chip and cutting method for same

Abstract

The invention discloses an AlGaInP light-emitting diode (LED) chip, which comprises a GaAs substrate serving as an epitaxial layer substrate. An epitaxial layer is arranged on one surface of the GaAs substrate, and serves as a PN junction of the LED chip. An Au thin film is plated on the other surface of the GaAs substrate, and serves as the cathode end of the LED chip. BeAu thin films arranged at equal intervals are deposited on the epitaxial layer, and an Au thin film is deposited on the BeAu thin films to form the anode ends of the LED chip. A cutting method for the AlGaInP LED chip specifically comprises the following steps of: (1) half-cutting the LED chip on one surfaces of the anode ends of the LED chip by using a diamond cutter to form cutting channels to separate the uniformly arranged anode ends of the LED chip, wherein the LED chip is 100 to 300 mu m thick; (2) coating a blue film at the anode ends of the LED chip, and coating a Mylar film at the cathode end of the LED chip; and (3) placing the LED chip on a cleaving table of a cleaver in a way that the anode end of the LED chip is downward and the cathode end of the LED chip is upward, and pressing and breaking the LED chip along the cutting channels by using a cleaving knife of the cleaver, so that the LED chip forms independent crystal grains.

Description

technical field [0001] The invention discloses a quaternary LED chip and a cutting method thereof, belonging to the technical field of LED chip manufacturing. Background technique [0002] Quaternary LED chips are widely valued by the semiconductor lighting industry due to their high luminous efficiency, wide color range, and long service life. They have been widely used in various fields such as large-screen displays, traffic lights, landscape lighting, and automotive status displays. [0003] The cutting method in the quaternary LED chip manufacturing process is the process of dividing the whole chip into a single crystal grain. In the prior art, the quaternary LED chip is cut in half and then completely cut with a diamond cutter. The cutting speed is low, the cutting knife wears fast, the life is short, the diamond cutting knife is expensive, and the demand for personnel and machines is relatively large, resulting in high machine costs and labor costs, and the cutting kni...

AI Technical Summary

Problems solved by technology

[0003] The cutting method in the quaternary LED chip manufacturing process is the process of dividing the whole chip into a single crystal grain. In the prior art, the quaternary LED chip is cut in half and then completely cut with a diamond cutter. The cutting speed is low, the cutting knife wears fast, the life is short, the diamond cutting knife is expensive, and the demand for personnel and machines is relatively large, resulting in high machine costs and labor costs, and the cutting knife is in direct contact with the chip during cutting. Edges are prone to edge chipping, chipping and cracks, and the product qualification rate is low

[0004] The width of the traditional dicing knife is 20 μm to 25 μm, so after cutting, the cutting surface of the chip has a loss of about 25 μm to 30 μm, and the loss of the section is relatively large, resulting in great waste

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