Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof

A transient voltage suppression, metal packaging technology, used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as signal distortion and high-frequency signal distortion, achieve low junction capacitance, solve large junction capacitance, weight light effect

Active Publication Date: 2012-10-03
CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the junction capacitance of conventional TVS diodes is usually around several hundred pF, even when the TVS diodes are not working in high-frequency lines, high-frequency signals are often distorted.
Therefore, there is an urgent need for a transient voltage suppression diode with low junction capacitance to solve the problem of signal distortion caused by large junction capacitance in high-frequency electronic circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof
  • Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof
  • Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0027] Such as figure 1 As shown, the present invention provides a low-capacitance metal-packaged silicon transient voltage suppressor diode, which includes a housing 10 and upper and lower leads 20, 30 drawn along the two ends of the housing 10, and it also includes a housing 10 Transient voltage suppression diode core 40, rectifier diode core 50, several solder layers 60 and two electrodes 70, 70', the transient voltage suppression diode core 40 and rectifier dio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a low-capacity metal packaged silicon transient voltage suppressor and a manufacturing method thereof. The low-capacity metal packaged silicon transient voltage suppressor comprises a shell, an upper lead and a lower lead which are drawn out along two ends of the shell, and a transient voltage suppressor chip, a rectifier diode chip, a plurality of solder layers and two electrodes which are arranged in the shell, wherein the shell is made of glass Kovar alloy; the transient voltage suppressor chip is connected in series with the rectifier diode chip; a plurality of solder layers are arranged on two sides of the transient voltage suppressor chip and the rectifier diode chip respectively; the transient voltage suppressor chip and the rectifier diode chip also are connected with the electrodes respectively; and the two electrodes are connected with the upper lead and the lower lead respectively. The low-capacity metal packaged silicon transient voltage suppressor has the functions of a transient voltage suppressor and a rectifier diode simultaneously, has the advantages of small size, light weight, low manufacturing cost and low junction capacity, and is particularly suitable to serve as a protective device in high frequency lines.

Description

technical field [0001] The invention relates to the field of diode processing, in particular to a structure of a transient voltage suppression diode and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor (TVS) for short, also known as clamping diode, is a high-efficiency circuit protection device commonly used in the world. When the two poles of the TVS diode are impacted by reverse transient high energy, it can change the high impedance between its two poles to low impedance at a speed of 10 minus 12 seconds, absorbing surge power up to several thousand watts , so that the voltage between the two poles is clamped at a predetermined value, effectively protecting the precision components in the electronic circuit from being damaged by various surge pulses. [0003] Transient voltage suppression diodes have been widely used in household appliances, electronic instruments, precision equipment, automatic control systems, computer systems,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L25/07H01L21/50
CPCH01L24/01
Inventor 吴贵松杨秀斌孙汉炳
Owner CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com