High conductivity and low loss ferrite material, ferrite thin film and preparation method thereof

A technology of ferrite material and ferrite film, which is applied in the field of electronic materials, can solve problems such as non-response of card readers and electronic tags, long recognition distance and low design distance, failure of reading process, etc., to achieve operation and process flow No pollution, smooth surface, adjustable thickness and size

Inactive Publication Date: 2012-10-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. The recognition distance is much lower than the design distance;
[0005] 2. The card reader and the electronic tag do not respond, and the reading fails
In this way, during the identification process, the alternating electromagnetic field induced by the tag under the action of the signal from the card reader is easily attenuated by the metal eddy current and the signal strength is greatly weakened, resulting in the failure of the reading process. Therefore, certain measures need to be taken to prevent it.

Method used

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  • High conductivity and low loss ferrite material, ferrite thin film and preparation method thereof
  • High conductivity and low loss ferrite material, ferrite thin film and preparation method thereof
  • High conductivity and low loss ferrite material, ferrite thin film and preparation method thereof

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preparation example Construction

[0046] A preparation method for 13.56MHz high-conductivity and low-loss ferrite material and its thin film comprises the following steps:

[0047] 1) Mix raw materials: Weigh the raw materials as required, put them into a ball mill for a ball mill. Among them, the mass ratio of material, balls and absolute ethanol is 1:3:1, and the mass ratio of large balls to small balls is 1:2. The ball milling time was 2 hours, and the rotational speed was set at 250 rpm. The main purpose of a ball mill is to mix the raw materials evenly, and the average particle size of the raw materials after ball milling is about 1 μm.

[0048] 2) Pre-burning: Dry the raw materials that have been ball-milled once, put the dried raw materials into a high-temperature furnace for pre-burning, the pre-burning temperature is 900°C, and the holding time is 2 hours.

[0049] 3) Secondary ball milling: The pre-burned raw materials are subjected to secondary ball milling, and additives CoO0~1.2wt% are added, V ...

Embodiment 1

[0055] 1) The ratio of ingredients: Fe 2 o 3 50mol% for NiO; 25mol% for NiO; 20mol% for ZnO; 5mol% for CuO; 0.3wt% for doping component CoO.

[0056] 2) One-time ball milling: Weigh the raw materials according to the requirements, and put them into a ball mill for one-time ball milling. Among them, the mass ratio of material, balls and absolute ethanol is 1:3:1, and the mass ratio of large balls to small balls is 1:2. The ball milling time was 2 hours, and the rotational speed was set at 250 rpm.

[0057] 3) Pre-burning: Dry the raw materials that have been ball-milled once. The temperature of the oven is 80°C. Put the dried raw materials into the furnace for pre-burning. The pre-burning temperature is 900°C, the holding time is 2 hours, and the heating rate is 2°C / min.

[0058] 4) Secondary ball milling: The raw materials after pre-burning are subjected to secondary ball milling, and the additive CoO~0.3wt% is added. Among them, the mass ratio of material, balls and abso...

Embodiment 2

[0062] 1) The ratio of ingredients: Fe 2 o 3 50mol% for NiO; 25mol% for NiO; 20mol% for ZnO; 5mol% for CuO; 0.3wt% for doping component CoO.

[0063] 2) One-time ball milling: Weigh the raw materials according to the requirements, and put them into a ball mill for one-time ball milling. Among them, the mass ratio of material, balls and absolute ethanol is 1:3:1, and the mass ratio of large balls to small balls is 1:2. The ball milling time was 2 hours, and the rotational speed was set at 250 rpm.

[0064] 3) Pre-burning: Dry the raw materials that have been ball-milled once. The temperature of the oven is 80°C. Put the dried raw materials into the furnace for pre-burning. The pre-burning temperature is 900°C, the holding time is 2 hours, and the heating rate is 2°C / min.

[0065] 4) Secondary ball milling: The raw materials after pre-burning are subjected to secondary ball milling, and additives CoO~0.3wt% are added, V 2 o 5 ~0.9wt%. Among them, the mass ratio of materia...

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Abstract

A high conductivity and low loss ferrite material, a ferrite thin film and a preparation method of the ferrite material relate to electronic materials. The ferrite material comprises main components and doping components, and is characterized in that the main components and the doping components are taken in terms of oxides; and the main components comprise the following main materials at mole percentage: 50 mol% of Fe2O3, 20 mol% to 30 mol% of NiO, 15mol% to 25mol% of ZnO, and 5mol% of CuO; and the doping components comprise the following materials by weight percentage: 0 to 1.2 wt% of CoO, and 0 to 1.2 wt% of V2O5. The preparation method provided by the invention is an ordinary oxide method, is simple in operation and process flow, and is pollution-free. The prepared ferrite material is high in magnetic permeability and is also small in loss, wherein for the 13.56M, when mu' is about 100, mu'' is less than 2. The obtained ferrite film is adjustable in thickness and size, is smooth and flat in surface and is light in density.

Description

technical field [0001] The present invention relates to electronic materials. Background technique [0002] With the rapid development of radio frequency and microwave communication, the research on ferrite materials used in power conversion and signal transmission in high frequency applications has been highly valued, and NiCuZn ferrite materials with good high frequency performance have become more and more important. application. NiCuZn ferrite materials are mainly used for anti-electromagnetic interference (EMI) and surface mount devices integrating power and anti-interference. Especially in the 21st century, with the increasing popularization and rapid development of information technology, the problem of electromagnetic interference is becoming more and more serious. Seriously, Electromagnetic Compatibility (EMC) is becoming more and more important. Especially with the increasing popularity of radio frequency identification (Radio Frequency Identification, RFID) tech...

Claims

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Application Information

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IPC IPC(8): C04B35/26C04B35/622
Inventor 梁迪飞薛志陈良李维佳杨宏伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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