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Method for preparing Hf-based high-K gate dielectric film on GaAs substrate

A gate dielectric and thin film technology is applied in the field of preparing Hf-based high-K gate dielectric thin films on GaAs substrates. , the effect of reducing the Fermi level pinning effect

Inactive Publication Date: 2012-09-12
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of the prior art, the purpose of the present invention is to provide a method for preparing an Hf-based high-K gate dielectric film on a GaAs substrate, which is used to solve the problem of GaAs substrate and high-K gate dielectric film in the prior art. Problems with poor interface properties and poor film quality

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  • Method for preparing Hf-based high-K gate dielectric film on GaAs substrate
  • Method for preparing Hf-based high-K gate dielectric film on GaAs substrate
  • Method for preparing Hf-based high-K gate dielectric film on GaAs substrate

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Embodiment 1

[0035] see figure 1 , which is shown as a process flow chart of preparing an Hf-based high-K gate dielectric film on a GaAs substrate in the present invention. As shown in the figure, the process method at least includes the following steps:

[0036] Step S1: Provide a single crystal GaAs wafer as the substrate substrate, and clean the GaAs substrate. The cleaning process is: first use acetone and absolute ethanol to ultrasonically clean the wafer for 3 to 5 minutes, preferably 5 minutes in this embodiment. minutes, then use 10% to 20% HCl solution to clean the GaAs surface for 1 to 5 minutes, preferably 3 minutes in this embodiment, rinse the sample with a large amount of deionized water, and finally use N 2 blow dry.

[0037] Step S2: Quickly put the dried GaAs wafer into the PEALD reaction chamber, and the GaAs wafer is exposed to the air for no more than 10 minutes. The temperature in the reaction chamber is 160°C to 250°C, preferably 180°C in this embodiment, and the ra...

Embodiment 2

[0043] Since the process flow in this embodiment is the same as that in Embodiment 1, except that the deposited high-K gate dielectric material is different, in order to simplify the description, please refer to figure 1 , the detailed steps are as follows:

[0044] Step S1: Provide a single crystal GaAs wafer as the substrate substrate, and clean the GaAs substrate. The cleaning process is: first use acetone and absolute ethanol to ultrasonically clean the wafer for 3 to 5 minutes, preferably 5 minutes in this embodiment. minutes, then use 10% to 20% HCl solution to clean the GaAs surface for 1 to 5 minutes, preferably 3 minutes in this embodiment, rinse the sample with a large amount of deionized water, and finally use N 2 blow dry.

[0045] Step S2: Quickly put the dried GaAs wafer into the PEALD reaction chamber, and the GaAs wafer is exposed to the air for no more than 10 minutes. The temperature in the reaction chamber is 160°C to 250°C, preferably 160°C in this embodi...

Embodiment 3

[0050] Since the process flow in this embodiment is the same as that in Embodiment 1, except that the deposited high-K gate dielectric material is different, in order to simplify the description, please refer to figure 1 , the detailed steps are as follows:

[0051] Step S1: Provide a single crystal GaAs wafer as the substrate substrate, and clean the GaAs substrate. The cleaning process is: first use acetone and absolute ethanol to ultrasonically clean the wafer for 3 to 5 minutes, preferably 5 minutes in this embodiment. minutes, then use 10% to 20% HCl solution to clean the GaAs surface for 1 to 5 minutes, preferably 3 minutes in this embodiment, rinse the sample with a large amount of deionized water, and finally use N 2 blow dry.

[0052] Step S2: Quickly put the dried GaAs wafer into the PEALD reaction chamber, and the GaAs wafer is exposed to the air for no more than 10 minutes. The temperature in the reaction chamber is 160°C to 250°C, preferably 200°C in this embodi...

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Abstract

The invention discloses a method for preparing an Hf-based high-K dielectric film on a GaAs substrate. The method comprises the following steps of: firstly providing a GaAs wafer as a substrate, cleaning the substrate, and placing the cleaned GaAs substrate wafer into an ALD (Atomic Layer Deposition) reaction cavity; then carrying out plasma in-situ pretreatment on the GaAs substrate by utilizing plasma, and then despoisting a high-K gate dielectric film; and finally carrying out in-situ aftertreatment on the high-K gate dielectric film by adopting oxygen plasma. According to the method disclosed by the invention, the GaAs substrate is passivated by virtue of the plasma in-situ pretreatment before the high-K gate dielectric film is deposited, interface characteristic between the high-K gate dielectric and the GaAs substrate is improved, influence of Fermi level pinning effect is reduced, and density and quality of the high-K film are improved by virtue of the oxygen plasma in-situ aftertreatment after the high-K gat dielectric film is formed.

Description

technical field [0001] The invention relates to an atomic layer deposition technology, in particular to a method for preparing an Hf-based high-K gate dielectric thin film on a GaAs substrate. Background technique [0002] As the size of devices in the field of microelectronics continues to decrease, silicon materials are gradually approaching their processing limits, and the speed and leakage current of silicon-based devices will be insurmountable challenges. Therefore, when weighing the contradiction between high performance and small size of the device, III-V compound semiconductor substrates are likely to be the preferred substrate materials for nMOS devices in mixed substrate technology. Compared with traditional silicon substrates, GaAs substrates have higher electron mobility, higher saturation velocity, and wider forbidden band. For nMOS devices with GaAs / high-K gate dielectric material structure, the interface characteristics are the key to ensure the continuous im...

Claims

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Application Information

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IPC IPC(8): H01L21/283
Inventor 程新红贾婷婷曹铎王中健徐大伟夏超宋朝瑞俞跃辉
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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