Liquid crystal display array substrate and manufacturing method thereof as well as liquid crystal display

Abstract

The invention discloses a liquid crystal display array substrate and a manufacturing method thereof as well as a liquid crystal display which are designed mainly aiming at the defects that an existing array substrate manufacturing process is complicated and low in production efficiency. The array substrate comprises a substrate, a gate electrode scanning line and a data line which are formed on the substrate, and pixel areas which are formed by the intersection of the grid electrode scanning line and the data line and arranged in a matrix form, wherein each pixel area at least comprises a thin film transistor device and a pixel electrode, the thin film transistor device comprises a gate electrode, a metal oxide semiconductor layer, a protective layer, a source electrode and a drain electrode, a gate insulation layer is arranged between the gate electrode and the metal oxide semiconductor layer, the metal oxide semiconductor layer is provided with the protective layer, and the source electrode and the drain electrode are respectively connected with the metal oxide semiconductor layer by virtue of through holes arranged on the protective layer. The array substrate is simple in manufacturing process and high in production efficiency, and can be used for avoiding the damage to the metal oxide semiconductor layer when the source electrode and the drain electrode are formed.

Description

technical field [0001] The invention relates to a liquid crystal display technology, in particular to a liquid crystal display array substrate, a manufacturing method thereof, and a liquid crystal display. Background technique [0002] In recent years, with the increasing size of liquid crystal displays and the increasing frequency of driving circuits, it is difficult for the mobility of existing amorphous silicon thin film transistors to meet the demand. The mobility of amorphous silicon thin film transistors is generally 0.5cm 2 / VS or so, the size of the liquid crystal display is more than 80 inches, and when the driving frequency is 120Hz, it needs 1cm 2 Mobility above / VS, it is obvious that the mobility of amorphous silicon is difficult to meet the demand. At present, metal oxide thin film transistors, such as amorphous IGZO, are popular for their high mobility, good uniformity, transparency, simple manufacturing process, and can meet the needs of large-size liquid c...

AI Technical Summary

Problems solved by technology

[0003] However, in the manufacturing process of metal oxide thin film transistors such as amorphous IGZO TFT, acid solution is generally used to etch the source and drain metal electrodes. Amorphous IGZO, which will directly affect the performance of amorphous IGZO TFT, which is very detrimental to the display effect

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