Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mach-Zehnder silicon light modulator

A modulator and silicon photonics technology, applied in the field of integrated optics, can solve the problem of weak dispersion effect of free carrier plasma, reduce the time of depletion and injection into the junction region, increase the modulation speed, and reduce the access resistance Effect

Inactive Publication Date: 2015-05-06
SOUTHEAST UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the electro-optic effect of III-V materials, the free-carrier plasmonic dispersion effect is still relatively weak

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mach-Zehnder silicon light modulator
  • Mach-Zehnder silicon light modulator
  • Mach-Zehnder silicon light modulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0039] A novel Mach-Zehnder silicon optical modulator of the present invention consists of an optical input channel, a multi-mode interference optical splitter, a ridge optical waveguide, a "Tian" type PN junction phase shift arm, a multi-mode interference optical coupler, and an optical output Channel composition. Among them, the "Tian" type PN junction phase shift arm is a ridge optical waveguide composed of double-layer PN junctions separated by intrinsic silicon layers. The two layers of PN junctions are antisymmetrically arranged, that is, the P-doped region of the upper layer corresponds to the N-doped region of the lower layer, and the N-doped region of the upper layer corresponds to the P-doped region of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Mach-Zehnder silicon light modulator, which is characterized by comprising a light input channel (1), a multimode interference light branching unit (3), a multimode interference light coupler (4), a light output channel (2), a ridge light waveguide (8), an anode electrode (5), a cathode electrode (6) and a PN junction phase shifting arm (7), wherein the multimode interference light branching unit (3) is connected with the light input channel (1), the light output channel (2) is connected with the multimode interference light coupler (4), the multimode interference light branching unit (3) is connected with the multimode interference light coupler (4) through the ridge light waveguide (8), the anode electrode (5) and the cathode electrode (6) are positioned on two sides of the ridge light waveguide (8), and the PN junction phase shifting arm (7) is positioned in the ridge light waveguide (8). By the aid of the Mach-Zehnder silicon light modulator, the action zone of a plasma dispersion effect for a light field is increased, the phase shifting efficiency of the phase shifting arm in unit length is improved, the length of the pionic phase shifting arm is decreased, and the packaging coefficient of the modulator is reduced.

Description

technical field [0001] The invention relates to a silicon optical modulator used in the field of optical communication system, optical network technology and optoelectronic integration, belonging to the field of integrated optics. Background technique [0002] The optical modulator is a key device for high-speed, long-distance optical communication and one of the most important integrated optical devices. It is a device that modulates the refractive index, absorptivity, amplitude, or phase of output light through changes in voltage or electric field. It is based on the basic theory of various forms of electro-optic effect, acousto-optic effect, magneto-optic effect, carrier dispersion effect and so on. [0003] Optical modulators based on materials such as lithium niobate and III-V semiconductors are currently the most commonly used optical modulators, and the modulation speed can reach 10Gbit / s. However, the above-mentioned modulators are discrete components, which are no...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/025
Inventor 肖金标
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com