Rotary traveling wave oscillator with high power output of multiple energy injection locking

Abstract

The invention belongs to the technical field of millimeter wave integrated circuits, and particularly relates to a rotary traveling wave oscillator of multiple energy injection locking. The circuit mainly comprises a rotary traveling wave oscillator, a negative resistance network, a voltage controlled variable capacitor, a voltage controlled phase shifter and a harmonic generation circuit. Parasitic resistances in a capacitance device and an inductance device are high with the rising of the signal frequency, particularly when the frequency in ranges of millimeter waves or sub-millimeter waves in the integrated circuit, and simple capacitance inductance oscillator is difficult to achieve the output of wide tuning ranges and large power. According to the rotary traveling wave oscillator, a voltage-controlled rotary traveling wave oscillator is used to produce fundamental frequency signals to couple the harmonic generation circuit at different positions of the oscillator. The produced high sub-harmonic signals are injected into another oscillator to achieve oscillation with high frequency. The injection locking range is increased by injecting a plurality of energy and choosing appropriate phase of the injected signal.

Description

technical field [0001] The invention belongs to the technical field of radio frequency microwave integrated circuits, and in particular relates to a multi-energy injection-locked rotating traveling wave oscillator. Background technique [0002] With the advancement of integrated circuit process technology, the feature size of transistors is constantly shrinking in accordance with Moore's Law. The shrinking of transistors makes the frequency of the intrinsic gain of the transistors continue to increase, so that circuits based on silicon materials have also been greatly developed in the microwave field. Previous microwave integrated circuits were all made of gallium arsenide material, but the price of this material is relatively expensive, so microwave integrated circuits have not been widely used in the civilian field. Silicon materials have great advantages in price and integration, so if silicon materials can be used to realize microwave circuits with good performance, it ...

AI Technical Summary

Problems solved by technology

There are mainly the following problems, first: the substrate conductivity of the silicon material process is large, resulting in relatively large loss of high-frequency signals and relatively low signal power

Second: With the reduction of the geometric size of the device, although the intrinsic gain is improved, the withstand voltage value of the device becomes very small, so it is difficult to achieve high power output

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