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Real-time monitoring method of each component beam intensity and injection dosage of mixed ion beam

A technology of mixing ion beam and beam intensity, which is applied in the application field of ion beam technology

Inactive Publication Date: 2012-08-01
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the prior art, when two or more mixed ion beams irradiate the same sample at the same time, there is no effective and reliable monitoring method for the total implant dose of ion beam irradiation and the implant dose of each beam component. Problem, the present invention proposes a real-time monitoring method for the beam intensity of each component of the mixed ion beam and a real-time monitoring method for the implantation dose. By using this method to sample and analyze the irradiation beam, it is possible to accurately know the concentration of each beam component when irradiating the sample. size, so as to realize the real-time, on-line and accurate monitoring of the total implantation dose and each beam component of multi-ion mixed beam irradiation

Method used

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  • Real-time monitoring method of each component beam intensity and injection dosage of mixed ion beam
  • Real-time monitoring method of each component beam intensity and injection dosage of mixed ion beam
  • Real-time monitoring method of each component beam intensity and injection dosage of mixed ion beam

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Embodiment Construction

[0049] Below in conjunction with accompanying drawing, the present invention will be further described by examples.

[0050] like figure 1 As shown, the Faraday cup used in the present invention includes: a metal shielding cylinder 1 ; an insulating layer 2 ; a metal receiving cylinder 3 ; an insulating isolation ring 4 ; a suppression electrode 5 ; exist figure 1 Among them, 7 is the beam current to be measured.

[0051] like figure 2 As shown, a solid pick 8 is placed between the sampling velocity Faraday cup and the beam to be measured.

[0052] The implementation of the present invention will be described in detail below in conjunction with the examples.

[0053] Large-area 3MeV protons and 25MeV Si produced by two accelerators 4+ Homogenously mixed beams with adjustable individual flow intensities. The monitoring method of the implanted dose of each component when the mixed beam of two ions irradiates the sample:

[0054] (1) Select the Faraday cup for sampling sp...

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Abstract

The invention provides a real-time monitoring method of each component beam intensity and injection dosage of mixed ion beams. The monitoring method is based on the fact that magnification coefficient is only related with intrinsic property of incidence ions if material quality and thickness of a solid slice remain unchanged when the ions penetrate through the solid slice, and magnification coefficient of the beams changes with change of the material quality or the thickness of the solid slice. Change of strength or integral quantity of the beams around the time when the incident mixed ions penetrate through the solid slice is measured according to the physical law and characteristics, so that beam strength or injection dose of each ion component can be determined when the mixed ion beams irradiate samples. The real-time monitoring method has no special limit on type and number of each component ion of the mixed ion beam to be measured, mutual proportional relation between beam strength and stability. The real-time monitoring method is simple and clear, low in cost and reliable in use.

Description

technical field [0001] The invention belongs to the application field of ion beam technology, and in particular relates to a real-time monitoring method of the beam current intensity of each component of a mixed ion beam and a real-time monitoring method of implantation dose. Background technique [0002] In recent years, with the rapid development of nuclear energy technology and the continuous advancement of human beings in space exploration, the radiation resistance of nuclear materials used in nuclear energy systems and various semiconductor electronic devices used in space exploration has become more and more extensive. In particular, the changes in the properties of related materials and devices, such as physical, chemical, mechanical, electrical, optical, etc., have become the focus of people's attention and research. . Due to the complexity, danger, inaccessibility, and non-universality of the real irradiation environment, it is neither scientific nor realistic to c...

Claims

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Application Information

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IPC IPC(8): G01T1/29G01T1/14
Inventor 任晓堂
Owner PEKING UNIV
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