Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material and preparation method thereof

A technology of bao-ln2o3-tio2 and microwave dielectric materials, which is applied in the field of high dielectric constant BaO-Ln2O3-TiO2 series microwave dielectric materials and its preparation, can solve the problems of low Q f and large temperature coefficient, and achieve excellent microwave The effect of dielectric properties

Inactive Publication Date: 2012-07-25
XIAMEN SUNYEAR ELECTRONICS CO LTD
View PDF1 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When εr=100, there are defects such as low Q f and large temperature coefficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material and preparation method thereof
  • High dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material and preparation method thereof
  • High dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] A kind of high dielectric constant BaO-Ln described in the present invention 2 o 3 -TiO 2 It is a microwave dielectric material and its preparation method. In combination with the above-mentioned content of the invention, the present invention will be further described by the following examples.

[0015] (1) To analyze pure BaCO 3 、TiO 2 、Sm 2 o 3 、Nd 2 o 3、 SrCO 3 , Mg(OH) 2 The raw materials are prepared according to the composition ratio of Table 1, and are obtained after processes such as ball milling, drying, pre-burning, pulverizing, and filtering according to the main material preparation process described in 1 in the Summary of the Invention (Ba 1-m-n Mg m Sr n ) 6-3X (Sm 1-y Nd y ) 8+2X Ti 18 o 54 .

[0016] Table 1 Main material (Ba 1-m-n Mg m Sr n ) 6-3X (Sm 1-y Nd y ) 8+2X Ti 18 o 54 Example recipe of

[0017]

[0018] (2) According to the composition of Table 2, the main material is (Ba 1-m-n Mg m Sr n ) 6-3X (Sm 1-y Nd...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material and a preparation method of the high dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material. The high dielectric constant BaO-Ln2O3-TiO2 system microwave dielectric material is composed of a major component (namely, (Ba1-m-nMgmSrn)6-3X(Sm1-yNdy)8+2XTi18O54), a sintering aid and a modified dopant. The major component, namely the (Ba1-m-nMgmSrn)6-3X(Sm1-yNdy)8+2XTi18O54 is solid solution, wherein the X is equal to 0-0.02; Y is equal to 0-0.05; m is equal to 0.002-0.025; and n is equal to 0.05-0.03. The sintering aid comprises one of or a mixture of more than one of low-melting-point oxides of Bi2O3, B2O3, CuO, Li2O, ZnO, SiO2, and the like and low-melting-point glass dust. The modified dopant comprises different metallic oxides and carbonate, such as one of or the mixture of more than one of ZrO2, BaCO3, TiO2, MnO2, SrO, and the like. The microwave dielectric material finally prepared through reasonable formula, optimized synthesis and ball-milling process can be sintered in the temperature range of 1250 DEG C to 1330 DEG C. The produced microwave capacitor has excellent microwave dielectric properties, wherein epsilon r is equal to 100; Q*f is more than or equal to 5500GHZ(3.5-4.5GHZ); and tau f(-40 DEG C-25 DEG C / 25 DEG C-125 DEG C) is less than or equal to 10PPM / DEG C.

Description

technical field [0001] The invention relates to a high dielectric constant BaO-Ln 2 o 3 -TiO 2 The invention relates to a microwave dielectric material and a preparation method thereof. Background technique [0002] With the rapid development of mobile communication systems, cable TV systems, and satellite communication systems, in order to realize the integrated miniaturization, high stability, and low price of microwave communication equipment, it has become a domestic It is an important topic in foreign high-tech ceramics research. With the development of high-frequency band application technology, the digitization of microwave equipment, and the miniaturization and integration of personal communication systems, it is hoped to develop high-quality microwave dielectric ceramic materials with high dielectric constant. However, microwave dielectric materials are currently [0003] When εr=100, there are defects such as low Q·f and large temperature coefficient. Conten...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462C04B35/50C04B35/622
Inventor 邹海雄张军志林康李太坤
Owner XIAMEN SUNYEAR ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products