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Transparent resistance random access memory

A resistive memory, resistive memory technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problem of not being able to manufacture or apply transparent electronic devices, and achieve low processing costs, stable performance, and good light transmittance. Effect

Inactive Publication Date: 2012-07-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the aforementioned substrates are opaque, they cannot be fabricated or applied to transparent electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Deposit aluminum-doped zinc oxide lower electrode 2 on a colorless and transparent glass substrate 1 by radio frequency magnetron sputtering:

[0024] The back vacuum of the sputtering chamber is 10 -5 Pa, with aluminum-doped zinc oxide as the target material, the sputtering gas is argon, the sputtering pressure is 1Pa, the sputtering power is 300W, and the sputtering time is 10 minutes, so that the thickness of the lower electrode 2 is 50nm. The atomic percent content of aluminum is 1%.

[0025] (2) Depositing a magnesium-doped zinc oxide resistive storage layer 3 on the lower electrode 2 by radio frequency magnetron sputtering:

[0026] The back vacuum of the sputtering chamber is 10 -5 Pa, with magnesium-doped zinc oxide as the target material, the sputtering gas is argon and oxygen gas mixture (flow ratio 98:2), the sputtering pressure is 1Pa, the sputtering power is 300W, and the sputtering time is 30 minutes. The thickness of the variable storage layer 3 is...

Embodiment 2

[0032] (1) Deposit aluminum-doped zinc oxide lower electrode 2 on polycarbonate substrate 1 by radio frequency magnetron sputtering method:

[0033] The back vacuum of the sputtering chamber is 10 -5 Pa, with aluminum-doped zinc oxide as the target material, the sputtering gas is argon, the sputtering pressure is 1Pa, the sputtering power is 300W, and the sputtering time is 20 minutes, so that the thickness of the lower electrode 2 is 80nm. The atomic percent content of aluminum is 3%.

[0034] (2) Depositing a magnesium-doped zinc oxide resistive storage layer 3 on the lower electrode 2 by radio frequency magnetron sputtering:

[0035] The back vacuum of the sputtering chamber is 10 -5 Pa, with magnesium-doped zinc oxide as the target material, the sputtering gas is argon and oxygen gas mixture (flow ratio 98:2), the sputtering pressure is 1Pa, the sputtering power is 300W, and the sputtering time is 40 minutes. The thickness of the variable storage layer 3 is 120nm, and t...

Embodiment 3

[0041] (1) Using the radio frequency magnetron sputtering method, deposit gallium-doped zinc oxide lower electrode 2 on a colorless and transparent polymethyl methacrylate substrate 1:

[0042] The back vacuum of the sputtering chamber is 10 -5 Pa, with gallium-doped zinc oxide as the target material, the sputtering gas is argon, the sputtering pressure is 1Pa, the sputtering power is 300W, and the sputtering time is 10 minutes, so that the thickness of the lower electrode 2 is 50nm. The atomic percent content of gallium is 4%.

[0043] (2) Deposit a beryllium-doped zinc oxide resistive storage layer 3 on the bottom electrode 2 by radio frequency magnetron sputtering:

[0044] The back vacuum of the sputtering chamber is 10 -5 Pa, with beryllium-doped zinc oxide as the target material, the sputtering gas is argon and oxygen gas mixture (flow ratio 98:2), the sputtering pressure is 1Pa, the sputtering power is 300W, and the sputtering time is 50 minutes. The variable storag...

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Abstract

The invention discloses a transparent resistance random access memory, which comprises a transparent substrate, a lower electrode, a resistance random memory layer and an upper electrode in sequence from bottom to top, wherein the lower electrode is connected with a lead, the upper electrode is connected with a wire, the upper electrode and the lower electrode are both aluminum-doped zinc oxide film or galium-doped zinc oxide film, and the resistance random memory layer is magnesium-doped zinc oxide film or beryllium-doped zinc oxide film. According to the invention, the transparent resistance random access memory can obtain good resistance change and memory characteristics by adopting the magnesium (or beryllium)-doped zinc oxide film as a memory unit of the resistance random access memory. The transparent resistance random access memory disclosed by the invention has the advantages of being good in light-admitting quality, high in memory density, good in stability and the like, and has wide application prospects.

Description

technical field [0001] The invention relates to a transparent resistive variable memory, which belongs to the fields of memory and microelectronics. [0002] Background technique [0003] The memory is the core memory device in the computer, which is used to store all the information of the computer. According to a driving method, memories are generally classified into volatile memories and nonvolatile memories. The data in the volatile memory disappears after the power is turned off, while the data in the non-volatile memory can still be retained when the power is turned off. This makes storage more secure, reliable and energy-efficient, requiring no power supply to maintain data integrity. Therefore, in order to meet the needs of current social information storage, memory will develop towards high-speed, large-capacity non-volatile storage. [0004] The most representative non-volatile memory currently on the market is flash memory. Its principle is based on charge st...

Claims

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Application Information

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IPC IPC(8): H01L27/24H01L45/00
Inventor 叶志镇吴科伟卢洋藩黄靖云汪雷
Owner ZHEJIANG UNIV
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