Random noise source and manufacturing method thereof
A technology of random noise source and production method, applied in the fields of signal processing and cryptography, to achieve the effect of high quality and high bandwidth
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[0014] Figures 1A-1E It is a schematic diagram of the process of making a semiconductor superlattice device by semiconductor micromachining in the present invention. see Figure 1A Firstly, a semiconductor superlattice material structure 10 is provided, and the method thereof is, for example, utilizing epitaxial growth techniques such as current mainstream molecular beam epitaxy (Molecular Beam Epitaxy, MBE), metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) and doping An epitaxial growth layer is formed on the semi-insulating semiconductor substrate 11 using complex techniques. Here, the epitaxial growth layer includes a first semiconductor contact layer 13 , a semiconductor superlattice layer structure 15 and a second semiconductor contact layer 17 sequentially formed on the semi-insulating semiconductor substrate 11 . In this embodiment, the material of the epitaxial growth layer uses III-V or II-VI compound semiconductor materials, ...
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