Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic resistance sensor for measuring magnetic field

A magneto-resistive sensor and magnetic field sensor technology, applied in the fields of magnetic field-controlled resistors, measuring electrical variables, measuring magnetic variables, etc., can solve the problems of power consumption, cost, and large-scale manufacturing.

Active Publication Date: 2012-07-11
MULTIDIMENSION TECH CO LTD
View PDF5 Cites 68 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This bias method usually uses external coils or permanent magnets. These designs are not advisable from the perspective of power consumption, cost and large-scale manufacturing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic resistance sensor for measuring magnetic field
  • Magnetic resistance sensor for measuring magnetic field
  • Magnetic resistance sensor for measuring magnetic field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0072] figure 1 It is the structure and electronic measurement schematic diagram of the tunnel junction magnetoresistance (Magnetic Tunnel Junctions, MTJ) element. The MTJ element 1 is composed of a pinning layer 2 , a tunnel barrier layer 5 , and a ferromagnetic layer (sensitive layer) 6 . The pinning layer 2 is composed of a ferromagnetic layer (pinned layer) 4 and an antiferromagnetic layer 3, and the exchange coupling between the ferromagnetic layer 4 and the antiferromagnetic layer 3 determines the magnetization direction of the ferromagnetic layer 4; the tunnel The barrier layer 5 is usually made of MgO or Al 2 o 3 Composition, located on the upper part of the ferromagnetic layer 4. Ferromagnetic layer 6 is located on top of tunnel barrier layer 5 . Arrow 8 and arrow 7 represent the magnetization directions of the pinned layer 4 and the sensitive layer 6 respectively. The magnetic moment 8 of the pinned layer 4 is relatively fixed under the action of a certain magne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a magnetic resistance sensor for measuring a magnetic field. By the sensor, the sensitivity of a magnetic resistance sensing element can be calculated, and is related to shape anisotropy and an outer field. A long shaft of a magnetic resistance element is parallel to a sensitive direction, and the magnetic moment of the magnetic resistance element can be further saturated by the component Hcross of the outer field in the vertical sensitive direction at the same time. A monolithic permanent magnet has the effect of generating an Hcross field with an angle and offsetting a non-ideal field along an easy magnetization axis at the same time. The magnetic resistance element with high sensitivity can be widely applied in the field of electrics. Six electrical bridges formed by the magnetic resistance sensor can be presented in the magnetic resistance sensor.

Description

technical field [0001] The invention relates to a magnetoresistance sensor, in particular to a magnetoresistance sensor for measuring a magnetic field. Background technique [0002] Magnetic sensors are widely used in modern systems to measure or sense physical parameters such as magnetic field strength, current, position, motion, orientation, etc. In the prior art, there are many different types of sensors used to measure magnetic fields and other parameters. However, they all suffer from various well-known limitations in the prior art, such as excessive size, low sensitivity, narrow dynamic range, high cost, low reliability, and other factors. Therefore, it is necessary to continuously improve magnetic sensors, especially sensors that are easy to integrate with semiconductor devices or integrated circuits and their manufacturing methods. [0003] Tunnel junction magnetoresistive sensors have the advantages of high sensitivity, small size, low cost and low power consumpti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09
CPCG01R33/093G01R33/09G01R15/205H10N50/10G01R33/098
Inventor 詹姆斯·G·迪克金英西沈卫锋薛松生
Owner MULTIDIMENSION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com