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Manufacture method of nano point array with perpendicular magnetic anisotropy

An anisotropic and perpendicular magnetic technology, applied in the manufacture of record carriers, etc., can solve problems such as damage to the edge of nano-dots, deterioration of perpendicular magnetic anisotropy, and reduction of medium signal-to-noise ratio

Inactive Publication Date: 2014-07-23
JILIN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, most of the nanostructures are obtained by etching continuous films. The above-mentioned methods inevitably cause different degrees of damage to the films. Poor anisotropy; ③Reduce the signal-to-noise ratio of the medium

Method used

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  • Manufacture method of nano point array with perpendicular magnetic anisotropy
  • Manufacture method of nano point array with perpendicular magnetic anisotropy
  • Manufacture method of nano point array with perpendicular magnetic anisotropy

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Embodiment Construction

[0022] First, a single-layer hexagonal close-packed colloidal array spherical substrate was prepared by self-assembly technology. figure 1 In a, spreading the colloidal spheres on the water surface; b, making the spheres monolayer close together to form an orderly monolayer film; c, transferring the orderly monolayer film to the substrate. The formed single-layer colloidal array is a hexagonal close-packed structure (as attached figure 2 shown).

[0023] The specific steps are: immerse the silicon substrate in 10% sodium dodecyl sulfate solution for 24 hours to obtain a hydrophilic substrate surface. Take 5 milliliters of 10wt.% polystyrene colloidal solution, dilute it with 5 milliliters of ethanol, and then take about 5 microliters and drop it on the surface of the soaked substrate, and the solvent and the beads spread on the surface of the substrate. The substrate piece is slowly immersed in a container containing deionized water, the container has a cross-sectional area...

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Abstract

The invention relates to a manufacture method of a nano structure material capable of being applied to high-density magnetic storage, and in particular relates to a manufacture method of a nano point array with perpendicular magnetic anisotropy. The manufacture method comprises the following steps of: 1, manufacturing a substrate: manufacturing a single-layer hexagonal close-packed colloid array spherical substrate by adopting a self-assembly technology; and 2, depositing a two-layer film: depositing a Co / Pt multilayer film on the colloid array spherical substrate manufactured in the step 1 by adopting a sputtering technology to ensure that a thickness of a film of a sphere gap is only 2 / 3 of that of a film on the top of a sphere, so as to obtain a nano point with the perpendicular magnetic anisotropy. The nano point array manufactured by adopting the manufacture method has a complete edge structure, good storage property and strong perpendicular magnetic anisotropy.

Description

technical field [0001] The invention relates to a preparation method of a nano-structure material applicable to high-density magnetic storage, in particular to a preparation method of a nano-dot array with perpendicular magnetic anisotropy. Background technique [0002] With the rapid development of the information industry, high-density, large-capacity, high-speed and low-cost information storage has attracted great attention. Compared with other information storage methods, magnetic storage has the advantages of excellent recording performance, flexible application, low price, and great potential for technological development. It is a major technology for contemporary information storage. Since the rapid increase of magnetic recording density in recent years, higher requirements have been put forward for recording methods and recording media, which has made the traditional longitudinal recording methods and recording media face serious challenges. [0003] Perpendicular m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/84
Inventor 王雅新张永军杨景海
Owner JILIN NORMAL UNIV
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