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CMOS image sensor

A technology of image sensor and photosensitive device, which is applied in image communication, TV, color TV components and other directions, can solve the problems of small fill factor, complicated circuit, and complicated logic of image sensor, so as to improve the dynamic range and improve the shooting frame rate. , the effect of increasing the frame rate

Active Publication Date: 2012-06-27
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Dual-mode CMOS image sensors usually include C-APS and PPS two readout methods, but the existing dual-mode CMOS image sensors either have complex circuits, resulting in a relatively small fill factor of the image sensor, or the logic is too complex

Method used

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Embodiment 1

[0035] See image 3 As shown in the figure, the present invention provides a CMOS image sensor connected to an external light intensity detection device preset with a light intensity threshold. The CMOS image sensor at least includes: a photosensitive device for converting light signals into signals Charge, the photosensitive device is a photodiode or a light gate, wherein the photodiode is a PN junction photodiode or a Pinned photodiode. In this embodiment, the photosensitive device adopts a photodiode (PD) 23, the positive terminal of the photodiode (PD) 23 is grounded, and the negative terminal is connected to the first capacitor (FD) 25. The dual-mode readout circuit, connected to the photodiode (PD) 23, includes a first capacitor (FD) 25, the first end of which is connected to the output end of the photodiode (PD) 23, and the second end is grounded, Used to store the signal charge generated by the photodiode (PD) 23; a first transistor (VPPS) 27, the first transistor (VPPS...

Embodiment 2

[0042] See image 3 , As shown in the figure, the basic circuit of the CMOS sensor in this embodiment is as in embodiment 1.

[0043] See Figure 4b As shown in the figure, specifically, the CMOS sensor includes shallow trench isolation trenches 21' formed at both ends of the P-type substrate 1', and the third transistor (GS) 22' is used to implement the shutter function, and its source The drains are all formed in the P-type substrate 1', the gate 222' is located between the source and the drain and is formed on the surface of the P-type substrate 1', the drain 221' is connected to a DC power source, and the gate 222' is connected to a shutter device; the photodiode (PD) 23' is formed in the P-type substrate 1', adopts a Pinned structure and is connected to the source of the third transistor (GS) 22', for connecting The light signal is converted into signal charge; the source and drain of the transfer transistor (TX) 24' are formed in the P-type substrate 1', and the gate 241' ...

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Abstract

The invention provides a CMOS (Complementary Metal Oxide Semiconductor) image sensor which comprises a photodiode, a bimodule read-out circuit, a global shutter and an integrating circuit. According to the invention, the dynamic range and the shooting frame rate of the CMOS image sensor are improved through a circuit with simple logic control. Under the condition of stronger ambient light, reading is performed in a PPS (Passive Pixel Sensor) mode, and electric charge is read directly without magnification, however, under the condition of poor ambient light, reading is performed in a C-APS (Active Pixel Sensor) mode, and variable gain reading is realized through different offsets, therefore, the dynamic range of the CMOS image sensor can be increased greatly; and the global shutter can enable all pixels to sense light simultaneously, so that the shooting frame rate is improved greatly, and the capability of shooting objects moving at high speed can be realized.

Description

Technical field [0001] The invention belongs to the field of semiconductors, and particularly relates to CMOS image sensors. Background technique [0002] As we all know, an image sensor is a semiconductor device that can convert optical images into electrical signals. Image sensors can be roughly classified into charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) image sensors. [0003] In recent years, the market share of smart solutions in which CMOS sensors integrate software functions in cameras has been expanding. The demand for CMOS sensors can grow seven times faster than CCD sensors. Among them, the rapid spread of camera phones and digital cameras is the main driving factor for this demand. Obviously, people are so optimistic about the growth prospects of CMOS image sensors based on the fact that compared with the CCD technology that has monopolized the field for more than 30 years, it can better satisfy users' increasing quality of new image ...

Claims

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Application Information

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IPC IPC(8): H04N5/341H04N5/355H04N5/374
Inventor 孙涛陈杰汪辉方娜田犁
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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