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Carbon and silicon carbide crucible and preparation process thereof

A silicon carbide crucible and a manufacturing process technology, applied in the field of silicon carbide crucible and its manufacturing process

Inactive Publication Date: 2012-06-27
HUNAN JIUHUA CARBON HI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low strength of graphite products, poor thermal shock resistance, short service life and frequent replacement, at the same time, it is difficult to form large-sized products, making it difficult to meet the requirements of the development of monocrystalline silicon production.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1, the silicon carbide crucible is made of carbon fiber and silicon carbide composite, and its manufacturing process is as follows:

[0021] Step 1, prefabrication, a crucible prefabricated body woven by full carbon fiber three-dimensional acupuncture method, the prefabricated body has a volume density of 0.4g / cm 3 ;

[0022] Step 2, curing, using furfurone resin to cure and shape the preform, the curing temperature is 120°C, and the curing time is 2 hours;

[0023] Step 3, densification, using asphalt to repeatedly impregnate and carbonize the dense preform, the impregnation pressure is 1MPa, and the carbonization temperature is 800°C. Until the crucible preform density ≥ 1.3g / cm 3 When , the densification process ends;

[0024] Step 4, purification, put the crucible preform into a high-temperature furnace for purification treatment, and the treatment temperature is 1800°C. The crucible is mechanically trimmed, and the diameter after processing is 491mm,...

Embodiment 2

[0029] Embodiment 2, the silicon carbide crucible is made of carbon fiber and silicon carbide composite, and its manufacturing process is as follows:

[0030] Step 1, prefabrication, a crucible prefabricated body woven by full carbon fiber three-dimensional acupuncture method, the prefabricated body has a volume density of 0.5g / cm 3 ;

[0031] Step 2, curing, using furfurone resin to cure and shape the preform, the curing temperature is 140°C, and the curing time is 4 hours;

[0032] Step 3, densification, using asphalt to repeatedly impregnate and carbonize the dense preform, the impregnation pressure is 2MPa, and the carbonization temperature is 900°C. Until the density of the crucible preform reaches 1.4g / cm 3 When , the densification process ends;

[0033] Step 4, purification, put the crucible preform into a high-temperature furnace for purification treatment, and the treatment temperature is 2200°C. The crucible is machined, the diameter after processing is 600mm, th...

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Abstract

A carbon and silicon carbide crucible and preparation process thereof solve the problem that common crucibles are low in strength, poor in thermal shock resistance, short in service life and the like. The carbon and silicon carbide crucible is composited by carbon fibers and silicon carbide, and the preparation process comprises the steps of prefabrication, solidification, densification, purification, silicon socking, carbonization and molding. Thickness of the crucible can be obviously reduced, the strength and the thermal shock resistance of the crucible are improved, and service life of the crucible is prolonged. The carbon and silicon carbide crucible and the preparation process are suitable to use of high temperature furnaces, such as single crystal furnaces.

Description

technical field [0001] The invention relates to a carbon and silicon carbide composite crucible for a single crystal furnace and a manufacturing process thereof. Background technique [0002] At present, the crucible for single crystal furnace is basically made of graphite, which is divided into three parts along the axial direction, commonly known as the three-petal crucible. Due to the low strength of graphite products, poor thermal shock resistance, short service life and frequent replacement, at the same time, it is difficult to form large-sized products, making it difficult to meet the requirements of the development of monocrystalline silicon production. Contents of the invention [0003] The object of the present invention is to provide a crucible for a high temperature furnace and its manufacturing process, especially suitable for a silicon carbide crucible for a single crystal furnace and its manufacturing process. [0004] The technical solution adopted by the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/84C04B35/80C04B35/565
Inventor 张超
Owner HUNAN JIUHUA CARBON HI TECH
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