Method for manufacturing T-shaped gate by adopting single electron beam exposure
A technology of electron beam exposure and electron beam glue, which is applied in the field of T-shaped grid preparation by single electron beam exposure, can solve the problems of double exposure alignment error, high time and cost, poor grid shape, etc. The effect of occupying cost and reducing the writing area when the computer is small
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[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0024] The method for preparing a T-shaped grid by using a single electron beam exposure provided by the present invention adopts a four-layer laminated glue, only needs to expose the grid pin pattern once, and through multiple layers of development, the grid cap and grid cap can be formed. Graphics required for grid pins.
[0025] The lamination glue structure that the present invention adopts is as figure 2 As shown, it is divided into 4 layers from bottom to top, which are the bottom electron beam glue ZEP, metal aluminum (Al), electron beam glue PMGI and the top electron beam glue ZEP, among which:
[0026] The bottom electron beam glue ZEP is formed on the semiconductor substrate, and its thickness is selected to b...
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