Method for preparing large-area flexible conductive film

Abstract

The invention discloses a method for preparing a large-area flexible conductive film, which includes the following steps: generating a SiO2 layer on a Si sheet to form a substrate and depositing a catalyst film on the substrate by using the physical vapor deposition (PVD) technology; placing the substrate deposited with the catalyst film in a chemical vapor deposition (CVD) device, introducing large flow Ar gas and H2 gas, simultaneously quickly heating the CVD device to 800 DEG C-1100 EDG C, introducing CH4 gas continuously for a few minutes, closing a CH4 air valve, and cooling the CVD device fast to room temperature to obtain a graphene film sample; placing the graphene film sample into etchant to etch away partial catalyst film; and transfer printing the graphene film sample to a flexible substrate from the substrate by using the transfer printing technology. The method achieves the purpose of preparing the large-area flexible conductive film which is good in conductive performance and capable of being folded and bent, and simultaneously can avoid damage to the flexible substrate caused by high temperature environment during preparing.

Description

technical field [0001] The invention relates to the field of flexible electronics, in particular to a method for making a large-area flexible conductive film using graphene. Background technique [0002] Traditional electronic devices are usually prepared on hard flat substrate materials, but with the advancement of technology, people began to try to develop flexible electronic devices (flexible light-emitting diodes, flexible solar cells, flexible displays, electronic eyes, etc.), which gradually produced A new discipline, flexible electronics. As an important part of the subject research, flexible conductive films have attracted a lot of attention. Initially, the research object of flexible conductive thin films mainly focused on organic semiconducting materials, but even the best organic single crystal materials still have a mobility of 1-2 cm 2 / (V s) (n-type semiconductor), 10-20 cm 2 / (V s) (p-type semiconductor), far from being comparable to the inorganic semicondu...

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Problems solved by technology

However, the quality of the film grown at low temperature is relatively poor, resulting in poor conductivity of the film, and due to the oxide conductive film (such as: In 2 o 3 :Sn, ZnO:Al) are relatively brittle and have poor stretchability. The substrate will crack during multiple bending and folding processes, and even the film will be separated from the substrate.

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