Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar cell and method for fabricating the same

A solar cell and manufacturing method technology, which is applied in the directions of manufacturing tools, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of increasing the angle of the top of the pyramid structure, increasing the reflectivity, and decreasing the photocurrent, and achieves a simple manufacturing method. , Improve coating problems, easy to control effect

Active Publication Date: 2012-05-30
IND TECH RES INST
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of etching to remove the sharp angle at the bottom of the pyramid also increases the angle at the top of the pyramid structure, resulting in an increase in reflectivity and a decrease in photocurrent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and method for fabricating the same
  • Solar cell and method for fabricating the same
  • Solar cell and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1~3

[0090] After the pyramid structure is formed on the silicon substrate, the silicon substrate is then subjected to a laser treatment process. The parameters of the laser treatment process are as follows:

[0091] Laser wavelength: 532nm

[0092] Focus height: -14.6mm

[0093] Beam size: 50 um

[0094] Energy density: 2J / m 2 (Experimental Example 1), 2.25J / m 2 (Experimental Example 2), 2.5J / m 2 (Experimental example 3)

[0095] Stage speed: 100_mm / sec

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
radiusaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

A solar cell and a method for fabricating the same are described. A pyramid structure is formed on a silicon substrate. A laser treatment is performed on the pyramid structure, so that a top portion of the pyramid structure has an arc shape, and a round is formed at a crest line of the pyramid structure. Films formed during subsequent processes hence have a uniform thickness and conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to a photoelectric element, and in particular to a solar cell capable of improving photoelectric conversion efficiency and a manufacturing method thereof. Background technique [0002] Solar energy is an energy source that is inexhaustible and non-polluting. It has always been the focus of attention when solving the problems of pollution and shortage of petrochemical energy. Solar cells (solar cells) can directly convert solar energy into electrical energy, and have become a very important research topic at present. [0003] A silicon-based solar cell is a common type of solar cell in the industry. The principle of silicon-based solar cells is to add high-purity semiconductor materials (silicon) to some impurities to make them exhibit different properties, so as to form p-type semiconductors and n-type semiconductors, and connect the pn-type semiconductors, so that A p-n junction is formed. The p-n junction is composed of posit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/04H01L31/18B23K26/36
CPCH01L31/1804H01L31/0684H01L31/0747H01L31/03529Y02E10/547Y02P70/50
Inventor 陈建勋陈毓儒
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products