Solid state light emitting device and method for making the same

Abstract

A method for making a solid state light emitting device includes: (a) forming a first cladding layer (42) on a substrate (41); (b) forming a matrix layer (431) above the first cladding layer (42), the matrix layer (431) having a top surface and being formed with a plurality of isolated spaces (434); (c) epitaxially forming a quantum cluster (432) in each of the spaces (434) such that the top surface of the matrix layer (431) and top surfaces of the quantum clusters (432) cooperatively define a coplanar surface (4301), the quantum clusters (432) cooperating with the matrix layer (431) to form a light emitting layer (430); (d) forming a second cladding layer (44) on the light emitting layer (430); and (e) forming an electrode unit (45) electrically connected to the first and second cladding layers (42, 44).

Description

technical field [0001] The invention relates to a light-emitting component and a manufacturing method thereof, in particular to a solid-state light-emitting component with a quantum cluster and a manufacturing method thereof. Background technique [0002] Solid-state light-emitting components, especially light-emitting diodes (LEDs for short), are used in a wide range of fields, mainly as display backlight modules, traffic signals and lighting. With the improvement of environmental protection awareness, light-emitting diodes are actively developed as the main light source of the new generation to replace the mercury lamps and tungsten bulbs in the past due to their advantages in energy saving and low pollution. Therefore, the brightness of light-emitting diodes is getting worse Importantly, the industry and academia are also making continuous efforts to improve the luminous efficiency of light-emitting diodes. [0003] refer to figure 1 The main structure of the convention...

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Problems solved by technology

[0010] It can be seen from the above description that although the luminous efficiency of the light-emitting diode 2 with a quasi-quantum dot structure is higher than that of the light-emitting diode 1 with a quantum well structure, the quasi-quantum dot 233 is formed by heat-treating a thin film of gallium indium-based compound at a high temperature. Formed from self-deformation, the shape and size are quite random with large differences, and the distribution state is also uncontrollable; according to research, the quasi-quantum dot structure is a structure that generates light energy, and its size and distribution state will affect the wavelength range of light emission. and luminous uniformity, and therefore, there is still room for improvement in the current quantum dot-like structure of light-emitting diodes, which requires the investment and efforts of the industry

[0011] It can be seen that the above-mentioned existing light-emitting diodes obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.

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