Appearance detection method of quasi-monocrystalline silicon wafer

An appearance inspection, quasi-single crystal technology, applied in the field of inspection, to achieve the effect of improving the accuracy and being easy to popularize

Inactive Publication Date: 2012-05-23
SUZHOU TALESUN SOLAR TECH CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

There are currently no cheap and convenient quantitative methods and tools to measure this proportional parameter

Method used

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  • Appearance detection method of quasi-monocrystalline silicon wafer
  • Appearance detection method of quasi-monocrystalline silicon wafer

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Embodiment Construction

[0014] The appearance inspection method of quasi-single crystal silicon wafer is different in that it includes the following steps:

[0015] Firstly, the surface area of ​​the quasi-single crystal silicon wafer is divided into n×n grids, so that the area of ​​each grid occupies 1 / (n×n) of the area of ​​the entire quasi-single crystal silicon wafer 1 . Specifically, taking n=10 as an example, each grid represents 1 / 100 of the surface area of ​​a quasi-single crystal silicon wafer, that is, figure 1 shown.

[0016] Next, for the convenience of subsequent detection, the n×n array is fabricated on a transparent substrate through grid lines to form a two-dimensional grid scale 2 . Specifically, the manufacturing method of the two-dimensional grid ruler 2 adopted in the present invention is to use a photoplotter to draw at the central position of the film negative in a dark room. Afterwards, the film negatives that have undergone the light painting process are developed and fixed....

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Abstract

The invention relates to an appearance detection method of a quasi-monocrystalline silicon wafer, comprising the following steps of: firstly dividing the surface area of the quasi-monocrystalline silicon wafer into a grid of n*n arrays so as to make each grid area to account for 1(n*n) of the quasi-monocrystalline silicon wafer area; making a transparent substrate on the arrays through mesh lines to form a two-dimension grid gage; superposing the two-dimension grid gage with the edge of the silicon wafer; observing the surface of the silicon wafer through the transparent substrate of the two-dimension grid gage, finding the location distribution of monocrystalline crystal grains and polycrystalline crystal grains on the silicon wafer, and calculating; finally, multiplying the grid number of the monocrystalline crystal grains by 1 / (n*n) to calculate the area proportion of the monocrystalline crystal grains in the whole silicon wafer, and multiplying the grid number of the polycrystalline crystal grains by 1 / (n*n) to calculate the area proportion of the polycrystalline crystal grains in the whole quasi-monocrystalline silicon wafer. By the adoption of the method provided by the invention, the quality of the quasi-monocrystalline silicon wafer can be rapidly evaluated, and accuracy of the detection can be raised.

Description

technical field [0001] The invention relates to a detection method, in particular to an appearance detection method of a quasi-single crystal silicon wafer. Background technique [0002] At present, a method of producing quasi-monocrystalline silicon wafers by polycrystalline ingots has appeared in the market. This method combines the advantages of single crystal and polycrystalline to improve the competitiveness of products. The quasi-monocrystalline silicon wafers produced by the above method In addition to containing large-area monocrystalline grains, it is often unavoidable to have partially randomly grown polycrystalline grains. However, the ratio of the area of ​​single and polycrystalline grains to the area of ​​the entire silicon wafer is an important technical parameter of quasi-single crystal silicon wafers, which is used to evaluate the quality of quasi-single crystal silicon wafers. Currently there are no cheap and convenient quantitative methods and tools to me...

Claims

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Application Information

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IPC IPC(8): G01N21/95G01B11/28
Inventor 钱峰魏青竹孙利国任军林陆俊宇汪燕玲
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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