Method for forming nickel silicide blocking layer

Abstract

The invention discloses a method for forming a nickel silicide blocking layer, which mainly comprises the following steps that: the cleaning treatment is carried out on the silicon substrate surface for removing oxides on the silicon substrate surface, and a first metal layer is deposited on a silicon substrate; and the oxidation resistant treatment is carried out on the first metal layer, then, a second metal layer is deposited on the first metal layer, and the first metal layer and the second metal layer jointly form a metal blocking layer of the silicon substrate surface. The first metal layer deposited on the silicon substrate surface is nickel or NiPt, after the first metal layer is deposited on the silicon substrate surface, hydrogen gas capable of preventing the nickel from being oxidized is continuously introduced into the first metal layer surface for 1 second to 5 minutes under the conditions of the temperature being 20 DEG C to 100 DEG C and the pressure being 0.01 to 1MPa, then, the second metal layer is deposited on the first metal layer and is titanium nitride, and the first metal layer and the second metal layer jointly form the metal blocking layer of the silicon substrate surface.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, and particularly relates to a method for forming a nickel silicide barrier layer. Background technique [0002] In the semiconductor processing industry, salicide formation is well known as a method of integrating low resistance materials on pre-defined areas of semiconductor structures processed to form semiconductor devices. Specifically, the salicide process is a method of reacting a silicon region of a semiconductor structure with a metal to form a silicide region. The self-aligned silicide can be selectively formed on the semiconductor structure without patterning or etching the deposited silicide, thereby forming regions of low resistance. [0003] With process scaling down to 65nm and below, nickel has been commonly used as a metal that reacts with silicon materials to form salicides on semiconductor structures. However, nickel is very active and easily react...

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Problems solved by technology

[0004] The invention discloses a method for forming a nickel silicide barrier layer. The purpose of the invention is to provide a process for preventing nickel from being oxidized by oxygen in the air, so as to solve the problem of depositing a nickel layer on a silicon substrate in the prior art. In the future, there is a problem that nickel is easily oxidized during the transfer process before depositing the titanium nitride layer

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