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Method of detecting memory ability of memory

A technology of memory capability and memory, applied in static memory, instruments, etc., to ensure the effect of performance

Inactive Publication Date: 2012-04-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the prior art, there are many patents and patent applications about memory and memory detection methods, such as "Non-volatile memory device and its detection method" disclosed in the Chinese patent application with publication number "CN1249519A" published on April 5, 2000. method", but none of the above technical problems

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Embodiment Construction

[0033] According to the method for detecting the memory memory capacity of the specific embodiment of the present invention, the flash memory is baked, the flash memory is subjected to high temperature, and the first check value calculated by the check algorithm of the read-only data in the read-only area before baking and the first check value after baking The read-only data in the read area is compared with the second check value calculated by the check algorithm. If the first check value and the second check value are equal, it is determined that the memory capacity of the flash memory is good, specifically the read-only area in the flash memory. Good or bad memory. If the memory is a nonvolatile memory (NVR memory for short), it is used to detect the memory capacity of the nonvolatile memory.

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described ...

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Abstract

The invention relates to a method of detecting memory ability of a memory; the memory comprises a read-only region; the method comprises the following steps of: calculating read-only data needing to be written into the read-only region by using a checking algorithm, and obtaining a first checking value; writing the read-only data into the read-only region; placing the memory in a simulation environment where data easily loses; reading out the read-only data stored in the read-only region; and calculating the readout read-only data by using the checking algorithm, obtaining a second checking value and judging the memory ability of the memory to be qualified when the first checking value and the second checking value are equal. The technical scheme of the method can be used for judging whether the data memory ability of the read-only region of the memory can undergo environmental test.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting memory memory capacity. Background technique [0002] Flash memory (Flash Memory) is a long-life non-volatile memory, which can still maintain the stored data information in the case of power failure. Flash memory is a variant of Electronically Erasable Read-Only Memory (EEPROM). Unlike EEPROM, it can be deleted and rewritten at the byte level instead of erasing the entire chip, so that flash memory can be updated faster than EEPROM. Because it can still save data when it is powered off, flash memory is usually used to save setting information, such as saving data in the BIOS (basic input and output program) of a computer, PDA (Personal Digital Assistant, personal digital assistant), digital camera, etc. [0003] Flash memory in the prior art includes NAND flash memory and NOR flash memory. NOR flash memory is very different from NAND flash memory....

Claims

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Application Information

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IPC IPC(8): G11C29/56
Inventor 任栋梁钱亮索鑫
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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