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Method for forming composite functional material structure

A technology of material structure and composite function, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as strain, fracture, interface difference, etc.

Inactive Publication Date: 2012-02-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Especially for the formation of structures such as GeOI and SGeOI, due to the large difference in thermal expansion coefficients (the thermal expansion coefficients are respectively Ge=5.8×10 -6 ℃ -1 , Si=2.8×10 -6 ℃ -1 ), when the annealing temperature is too high for bonding such as Ge-Si, Ge-SiO 2 Bonding will cause strain or even fracture due to different degrees of expansion, making the bonding quality, crystal quality, and interface between layers poor, thus affecting the structural quality and performance

Method used

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  • Method for forming composite functional material structure
  • Method for forming composite functional material structure
  • Method for forming composite functional material structure

Examples

Experimental program
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Embodiment 1

[0042] This embodiment discloses a method for forming a germanium-on-insulator structure by high-energy deep implantation. Figure 2a-Figure 2d It is a schematic diagram of the wafer structure after performing various steps in the method for forming the composite functional material structure in this embodiment. As shown in the figure, this embodiment includes the following steps:

[0043] Step S202: He ion implantation acts on the Ge wafer 102 of the donor wafer, and the dose is 1×10 16 , the energy is 500KeV, the H ion implantation acts on the Ge wafer, and the dose is 3×10 16 cm -2 , the implantation energy is 300KeV, the projected range of H ion and He ion implantation is controlled at 2100nm, and a fragile region 20 is formed around this projected range, such as Figure 2a shown;

[0044] Step S204: growing a layer of SiO on the surface of the substrate wafer Si sheet 202 by thermal oxidation 2 Membrane 302, with a thickness of about 80nm, the Si wafer and the Ge waf...

Embodiment 2

[0048] This embodiment discloses a method for forming LaAlO on insulator 3 The method of thin-layer structure. Figure 3a-Figure 3d It is a schematic diagram of the wafer structure after performing various steps in the method for forming the composite functional material structure in this embodiment. As shown in the figure, this embodiment includes the following steps:

[0049] Step S302: H ion implantation acts on LaAlO 3 Wafer 103 with a dose of 2 x 10 17 cm -2 , the implantation energy is 60KeV, the projected range of ion implantation is controlled at 500nm, and a fragile region 30 is formed around this projected range, such as Figure 3a shown;

[0050] Step S304: LaAlO 3 Wafer 103 and glass (glass) 203 are through cleaning and ion surface activation, two wafers are bonded, as Figure 3b shown;

[0051] Step S306: Perform annealing heat treatment on the bonded structure. The annealing temperature in the first step is 250°C and the annealing time is 40 hours to stre...

Embodiment 3

[0054] This embodiment discloses a method for forming a GaN thin layer structure. Figure 4a-Figure 4d It is a schematic diagram of the wafer structure after performing various steps in the method for forming the composite functional material structure in this embodiment. As shown in the figure, this embodiment includes the following steps:

[0055] Step S402: H ion implantation acts on the donor wafer GaN wafer 104 with a dose of 3×10 17 cm -2 , the energy is 200KeV, the projected range of ion implantation is controlled at 500nm, and a fragile region 40 is formed around this projected range, such as Figure 4a ;

[0056] Step S404: Epitaxially grow a layer of Al on the surface of the donor wafer GaN wafer 104 2 o 3 Film 404, thickness is about 150nm, grows a layer of SiO with a thickness of 200nm by CVD (Chemical Vapor Deposition) on the surface of substrate wafer Si sheet 204 2 Layer 304, after standard cleaning process and ionic surface activation, will undergo Al 2 ...

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Abstract

The invention discloses a method for forming a composite functional material structure. The method comprises the steps of: A. injecting high energy ions in a donor wafer surface layer, and forming a fragile zone at the projecting gunshot of ion injection, wherein the energy of the ion injection ranges from 60 KeV to 500 KeV; B. bonding a donor wafer with an underlay wafer, and forming a composite structure comprising the donor wafer and the underlay wafer; and C. annealing the composite structure formed by bonding, peeling off the donor wafer in the fragile zone, attaching the donor wafer thin-layer structure to the surface of the underlay wafer, and forming the composite functional material structure. A better transfer thin layer can also be obtained even in the presence of a small number of bonding defects by employing high energy ion injection, controlling the position of the projecting gunshot in a farther distance away from the surface and utilizing the peeling of the wafer surface layer, so that the quality and the performance of the transfer layer and the peeling efficiency are increased.

Description

technical field [0001] The invention relates to the technical field of component preparation in the microelectronics industry, in particular to a method for forming a composite functional material structure. Background technique [0002] Today's semiconductor technology is developing rapidly, the device size is getting smaller and smaller, and the circuit integration is getting higher and higher. Due to the constraints of its own material properties, silicon (Si) MOS devices have shown a lot in the current development of microelectronics technology. With the gradual reduction of the feature size of integrated circuits to 45nm, or even 22nm, a series of new problems have appeared in the device theory, device structure and manufacturing process of bulk silicon MOS devices, making its power consumption, reliability and cost performance have been greatly affected. Other materials such as germanium (Ge), graphene, gallium nitride (GaN), and III-V compounds have higher carrier mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18H01L21/762H01L21/265
Inventor 张轩雄杨帆
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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