High-reliability image sensor packaging structure without silicon through hole

Abstract

The invention relates to a high-reliability image sensor packaging structure without a silicon through-hole, comprising a chip body (1), wherein an isolated layer (5) is arranged on the upper surface of the chip body, and the isolated layer (5) is provided with a nonopaque cover plate (6); a silicon groove (8) is formed on the chip body; the lower surface of the chip body, a side wall of the silicon groove (8) and the lower surface of an exposed passivation layer (2) in the chip are selectively provided with an insulating layer (9); a blind hole (10) is formed on the exposed passivation layer (2) in the chip; a metal line layer (11) is formed on the surface of the insulating layer (9) and in the blind hole (10) selectively; a line protective layer (12) is arranged on the insulating layer (9) and the metal line layer (11) selectively; and a solder ball (13) is arranged at a position that the metal line layer (11) is exposed out of the line protective layer (12). The structure has the advantages of simple structure, good interconnection reliability, simple technology and low cost.

Description

technical field [0001] The invention relates to a packaging structure of a wafer-level image sensor. It belongs to the technical field of semiconductor packaging. Background technique [0002] An image sensor is a semiconductor device that converts external light signals into electrical signals, and the obtained electrical signals are processed for final imaging. Wafer-level image sensor packaging is a new type of image sensor packaging. Compared with traditional lead-bonded packaging, it has the advantages of small package size, low price, and the photosensitive area is not easily polluted during downstream assembly. It is being more and more popular. Much attention. Since the chip electrodes of the image sensor or the internal metal layer and the photosensitive area of ​​the chip are located on the front of the chip, wafer-level packaging needs to reserve the front of the chip as a photosensitive window, and redistribute the internal metal layer of the chip from the fron...

AI Technical Summary

Problems solved by technology

Due to the introduction of through-silicon via interconnection in this wafer-level image sensor packaging method, the packaging structure is complicated; and the through-silicon via interconnection technology is not yet mature, often due to poor insulation in the hole, incomplete interconnection windows, and incomplete metal filling. Leading to failure or poor reliability, this kind of wafer-level image sensor packaging using TSV interconnection has the problems of high process difficulty and low interconnection reliability

At the same time, the complexity of the through-silicon via interconnection process also makes the packaging price of the wafer-level image sensor using this technology relatively expensive.

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